Low-voltage programming of RRAM-based crossbar arrays using MOS parasitic diodes
Due to their high density, scalability, and low-power properties, 1-transistor-1-resistor (1T1R) RRAM-based crossbars have been exploited in the past. However, the series resistance of the transistor is a major problem in 1T1R crossbar arrays. This limits the maximum current available for inducing r...
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Frontiers Media S.A.
2025-07-01
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| Series: | Frontiers in Nanotechnology |
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| Online Access: | https://www.frontiersin.org/articles/10.3389/fnano.2025.1587700/full |
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| author | Sachin Maheshwari Alex Serb Themis Prodromakis |
| author_facet | Sachin Maheshwari Alex Serb Themis Prodromakis |
| author_sort | Sachin Maheshwari |
| collection | DOAJ |
| description | Due to their high density, scalability, and low-power properties, 1-transistor-1-resistor (1T1R) RRAM-based crossbars have been exploited in the past. However, the series resistance of the transistor is a major problem in 1T1R crossbar arrays. This limits the maximum current available for inducing resistive switching and degrades the array’s performance. To mitigate this issue, we propose a new configuration—1-transistor-1-diode-1-resistor (1T1D1R)—in which diodes are used (including bulk source/drain parasitic diodes of the access transistor) to bypass the gating transistor during the programming operation (“write”). The proposed solution trades increased overhead in the layout area for a dramatic increase in the maximum achievable current drive on RRAM devices, resulting in the ability to deliver 1.5 mA+ with a voltage supply as low as 1.2 V using minimum-size devices (in our implementation). We designed a 32 × 32 crossbar array with on-chip peripheral circuitry in commercially available 0.18 μm triple-well CMOS technology for the proof of concept. We demonstrate bidirectional programming, showing a memristance change of ≈500 Ω for 120 and 80 pulses in positive and negative directions, respectively. |
| format | Article |
| id | doaj-art-475c53abea3341bb91f5e804e1f5eeb6 |
| institution | DOAJ |
| issn | 2673-3013 |
| language | English |
| publishDate | 2025-07-01 |
| publisher | Frontiers Media S.A. |
| record_format | Article |
| series | Frontiers in Nanotechnology |
| spelling | doaj-art-475c53abea3341bb91f5e804e1f5eeb62025-08-20T02:44:43ZengFrontiers Media S.A.Frontiers in Nanotechnology2673-30132025-07-01710.3389/fnano.2025.15877001587700Low-voltage programming of RRAM-based crossbar arrays using MOS parasitic diodesSachin MaheshwariAlex SerbThemis ProdromakisDue to their high density, scalability, and low-power properties, 1-transistor-1-resistor (1T1R) RRAM-based crossbars have been exploited in the past. However, the series resistance of the transistor is a major problem in 1T1R crossbar arrays. This limits the maximum current available for inducing resistive switching and degrades the array’s performance. To mitigate this issue, we propose a new configuration—1-transistor-1-diode-1-resistor (1T1D1R)—in which diodes are used (including bulk source/drain parasitic diodes of the access transistor) to bypass the gating transistor during the programming operation (“write”). The proposed solution trades increased overhead in the layout area for a dramatic increase in the maximum achievable current drive on RRAM devices, resulting in the ability to deliver 1.5 mA+ with a voltage supply as low as 1.2 V using minimum-size devices (in our implementation). We designed a 32 × 32 crossbar array with on-chip peripheral circuitry in commercially available 0.18 μm triple-well CMOS technology for the proof of concept. We demonstrate bidirectional programming, showing a memristance change of ≈500 Ω for 120 and 80 pulses in positive and negative directions, respectively.https://www.frontiersin.org/articles/10.3389/fnano.2025.1587700/fullcrossbar arraylow voltageRRAM1T1Rparasitic diodeprogramming |
| spellingShingle | Sachin Maheshwari Alex Serb Themis Prodromakis Low-voltage programming of RRAM-based crossbar arrays using MOS parasitic diodes Frontiers in Nanotechnology crossbar array low voltage RRAM 1T1R parasitic diode programming |
| title | Low-voltage programming of RRAM-based crossbar arrays using MOS parasitic diodes |
| title_full | Low-voltage programming of RRAM-based crossbar arrays using MOS parasitic diodes |
| title_fullStr | Low-voltage programming of RRAM-based crossbar arrays using MOS parasitic diodes |
| title_full_unstemmed | Low-voltage programming of RRAM-based crossbar arrays using MOS parasitic diodes |
| title_short | Low-voltage programming of RRAM-based crossbar arrays using MOS parasitic diodes |
| title_sort | low voltage programming of rram based crossbar arrays using mos parasitic diodes |
| topic | crossbar array low voltage RRAM 1T1R parasitic diode programming |
| url | https://www.frontiersin.org/articles/10.3389/fnano.2025.1587700/full |
| work_keys_str_mv | AT sachinmaheshwari lowvoltageprogrammingofrrambasedcrossbararraysusingmosparasiticdiodes AT alexserb lowvoltageprogrammingofrrambasedcrossbararraysusingmosparasiticdiodes AT themisprodromakis lowvoltageprogrammingofrrambasedcrossbararraysusingmosparasiticdiodes |