A Monolithic High-G SOI-MEMS Accelerometer for Measuring Projectile Launch and Flight Accelerations
Analog Devices (ADI) has designed and fabricated a monolithic high-g acceleration sensor (ADXSTC3-HG) fabricated with the ADI silicon-on-insulator micro-electro-mechanical system (SOI-MEMS) process. The SOI-MEMS sensor structure has a thickness of 10 um, allowing for the design of inertial sensors w...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2006-01-01
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| Series: | Shock and Vibration |
| Online Access: | http://dx.doi.org/10.1155/2006/793564 |
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