Development of High voltage 4H-SiC Junction Barrier Schottky Diode with 3 300 V Blocking Voltage
In order to meet the demands of high-voltage SiC diodes in railway traction, different gate parameters were applied to the active area of 4H-SiC device and their effects on device performance were comparatively analyzed through TCAD simulation. The junction termination extension (JTE) structures us...
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| Format: | Article |
| Language: | zho |
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Editorial Office of Control and Information Technology
2016-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.200 |
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| _version_ | 1849224722885115904 |
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| author | PENG Zhaoyang BAI Yun SHEN Huajun WU Yudong GAO Yunbin LIU Xinyu |
| author_facet | PENG Zhaoyang BAI Yun SHEN Huajun WU Yudong GAO Yunbin LIU Xinyu |
| author_sort | PENG Zhaoyang |
| collection | DOAJ |
| description | In order to meet the demands of high-voltage SiC diodes in railway traction, different gate parameters were applied to the active area of 4H-SiC device and their effects on device performance were comparatively analyzed through TCAD simulation. The junction termination extension (JTE) structures used optimized 35 rings. With Ti as Schottky contact metal, the fabricated 3 300 V/15 A SiC JBS device obtained a Shcottky barrier of 1.19 eV and the blocking voltage was above 3 300 V. According to the device’s characteristic curves, the specific on resistance was calculated to be 7.6 mΩ?cm2 and 19 mΩ·cm2 respectively. This is the first reported 3 300 V/15 A type SiC JBS device fabricated in china . Experimental results show that the diode has a blocking voltage up to 3 300 V with low leakage current of 0.3 μA at room temperature, and the avalanche breakdown voltage is 3 800 V. |
| format | Article |
| id | doaj-art-46c08f3c26e94f8f83b5a02ece3c2eb9 |
| institution | Kabale University |
| issn | 2096-5427 |
| language | zho |
| publishDate | 2016-01-01 |
| publisher | Editorial Office of Control and Information Technology |
| record_format | Article |
| series | Kongzhi Yu Xinxi Jishu |
| spelling | doaj-art-46c08f3c26e94f8f83b5a02ece3c2eb92025-08-25T06:55:03ZzhoEditorial Office of Control and Information TechnologyKongzhi Yu Xinxi Jishu2096-54272016-01-01465082330362 Development of High voltage 4H-SiC Junction Barrier Schottky Diode with 3 300 V Blocking VoltagePENG ZhaoyangBAI YunSHEN HuajunWU YudongGAO YunbinLIU Xinyu In order to meet the demands of high-voltage SiC diodes in railway traction, different gate parameters were applied to the active area of 4H-SiC device and their effects on device performance were comparatively analyzed through TCAD simulation. The junction termination extension (JTE) structures used optimized 35 rings. With Ti as Schottky contact metal, the fabricated 3 300 V/15 A SiC JBS device obtained a Shcottky barrier of 1.19 eV and the blocking voltage was above 3 300 V. According to the device’s characteristic curves, the specific on resistance was calculated to be 7.6 mΩ?cm2 and 19 mΩ·cm2 respectively. This is the first reported 3 300 V/15 A type SiC JBS device fabricated in china . Experimental results show that the diode has a blocking voltage up to 3 300 V with low leakage current of 0.3 μA at room temperature, and the avalanche breakdown voltage is 3 800 V.http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.200breakdown voltage4H-SiCjunction barrier Schottky （JBS）diode |
| spellingShingle | PENG Zhaoyang BAI Yun SHEN Huajun WU Yudong GAO Yunbin LIU Xinyu Development of High voltage 4H-SiC Junction Barrier Schottky Diode with 3 300 V Blocking Voltage Kongzhi Yu Xinxi Jishu breakdown voltage 4H-SiC junction barrier Schottky （JBS）diode |
| title | Development of High voltage 4H-SiC Junction Barrier Schottky Diode with 3 300 V Blocking Voltage |
| title_full | Development of High voltage 4H-SiC Junction Barrier Schottky Diode with 3 300 V Blocking Voltage |
| title_fullStr | Development of High voltage 4H-SiC Junction Barrier Schottky Diode with 3 300 V Blocking Voltage |
| title_full_unstemmed | Development of High voltage 4H-SiC Junction Barrier Schottky Diode with 3 300 V Blocking Voltage |
| title_short | Development of High voltage 4H-SiC Junction Barrier Schottky Diode with 3 300 V Blocking Voltage |
| title_sort | development of high voltage 4h sic junction barrier schottky diode with 3 300 v blocking voltage |
| topic | breakdown voltage 4H-SiC junction barrier Schottky （JBS）diode |
| url | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.200 |
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