GaN-Based Generic Bifunction LED for Potential Duplex Free-Space VLCs
A generic bifunction GaN light-emitting diode (LED) structure, which has a 300 nm <italic>n<sup>+</sup> -ZnO</italic> epitaxial layer grown on a standard GaN LED epistack and a mesa size of <inline-formula> <tex-math notation="LaTeX"&g...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7995022/ |
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