A 32 μm<sup>2</sup> MOS-Based Remote Sensing Temperature Sensor with 1.29 °C Inaccuracy for Thermal Management
This paper introduces a compact NMOS-based temperature sensor designed for precise thermal management in high-performance integrated circuits. Fabricated using the TSMC 180 nm process with a 1.8 V supply, this sensor employs a single diode-connected NMOS transistor, achieving a significant size redu...
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| Format: | Article |
| Language: | English |
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MDPI AG
2025-01-01
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| Series: | Computers |
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| Online Access: | https://www.mdpi.com/2073-431X/14/1/26 |
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| author | Ruohan Yang Kwabena Oppong Banahene Bryce Gadogbe Randall Geiger Degang Chen |
| author_facet | Ruohan Yang Kwabena Oppong Banahene Bryce Gadogbe Randall Geiger Degang Chen |
| author_sort | Ruohan Yang |
| collection | DOAJ |
| description | This paper introduces a compact NMOS-based temperature sensor designed for precise thermal management in high-performance integrated circuits. Fabricated using the TSMC 180 nm process with a 1.8 V supply, this sensor employs a single diode-connected NMOS transistor, achieving a significant size reduction and improved voltage headroom. The sensor’s area is 32 µm<sup>2</sup> per unit, enabling dense integration around thermal hotspots. A novel voltage calibration method ensures accurate temperature extraction. The measurement results demonstrate three-sigma errors within ±0.1 °C in the critical range of 75 °C to 95 °C and +1.29/−1.08 °C outside this range, confirming the sensor’s high accuracy and suitability for advanced thermal management applications. |
| format | Article |
| id | doaj-art-45c1272228a3417786ff2a0cfc5e7d43 |
| institution | Kabale University |
| issn | 2073-431X |
| language | English |
| publishDate | 2025-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Computers |
| spelling | doaj-art-45c1272228a3417786ff2a0cfc5e7d432025-01-24T13:27:55ZengMDPI AGComputers2073-431X2025-01-011412610.3390/computers14010026A 32 μm<sup>2</sup> MOS-Based Remote Sensing Temperature Sensor with 1.29 °C Inaccuracy for Thermal ManagementRuohan Yang0Kwabena Oppong Banahene1Bryce Gadogbe2Randall Geiger3Degang Chen4Department of Electrical and Computer Engineering, Iowa State University, Ames, IA 50011, USADepartment of Electrical and Computer Engineering, Iowa State University, Ames, IA 50011, USADepartment of Electrical and Computer Engineering, Iowa State University, Ames, IA 50011, USADepartment of Electrical and Computer Engineering, Iowa State University, Ames, IA 50011, USADepartment of Electrical and Computer Engineering, Iowa State University, Ames, IA 50011, USAThis paper introduces a compact NMOS-based temperature sensor designed for precise thermal management in high-performance integrated circuits. Fabricated using the TSMC 180 nm process with a 1.8 V supply, this sensor employs a single diode-connected NMOS transistor, achieving a significant size reduction and improved voltage headroom. The sensor’s area is 32 µm<sup>2</sup> per unit, enabling dense integration around thermal hotspots. A novel voltage calibration method ensures accurate temperature extraction. The measurement results demonstrate three-sigma errors within ±0.1 °C in the critical range of 75 °C to 95 °C and +1.29/−1.08 °C outside this range, confirming the sensor’s high accuracy and suitability for advanced thermal management applications.https://www.mdpi.com/2073-431X/14/1/26complementary metal oxide semiconductor (CMOS) temperature sensorsmart sensorthermal managementtemperature calibrationremote sensing |
| spellingShingle | Ruohan Yang Kwabena Oppong Banahene Bryce Gadogbe Randall Geiger Degang Chen A 32 μm<sup>2</sup> MOS-Based Remote Sensing Temperature Sensor with 1.29 °C Inaccuracy for Thermal Management Computers complementary metal oxide semiconductor (CMOS) temperature sensor smart sensor thermal management temperature calibration remote sensing |
| title | A 32 μm<sup>2</sup> MOS-Based Remote Sensing Temperature Sensor with 1.29 °C Inaccuracy for Thermal Management |
| title_full | A 32 μm<sup>2</sup> MOS-Based Remote Sensing Temperature Sensor with 1.29 °C Inaccuracy for Thermal Management |
| title_fullStr | A 32 μm<sup>2</sup> MOS-Based Remote Sensing Temperature Sensor with 1.29 °C Inaccuracy for Thermal Management |
| title_full_unstemmed | A 32 μm<sup>2</sup> MOS-Based Remote Sensing Temperature Sensor with 1.29 °C Inaccuracy for Thermal Management |
| title_short | A 32 μm<sup>2</sup> MOS-Based Remote Sensing Temperature Sensor with 1.29 °C Inaccuracy for Thermal Management |
| title_sort | 32 μm sup 2 sup mos based remote sensing temperature sensor with 1 29 °c inaccuracy for thermal management |
| topic | complementary metal oxide semiconductor (CMOS) temperature sensor smart sensor thermal management temperature calibration remote sensing |
| url | https://www.mdpi.com/2073-431X/14/1/26 |
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