A 32 μm<sup>2</sup> MOS-Based Remote Sensing Temperature Sensor with 1.29 °C Inaccuracy for Thermal Management
This paper introduces a compact NMOS-based temperature sensor designed for precise thermal management in high-performance integrated circuits. Fabricated using the TSMC 180 nm process with a 1.8 V supply, this sensor employs a single diode-connected NMOS transistor, achieving a significant size redu...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-01-01
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| Series: | Computers |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-431X/14/1/26 |
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| Summary: | This paper introduces a compact NMOS-based temperature sensor designed for precise thermal management in high-performance integrated circuits. Fabricated using the TSMC 180 nm process with a 1.8 V supply, this sensor employs a single diode-connected NMOS transistor, achieving a significant size reduction and improved voltage headroom. The sensor’s area is 32 µm<sup>2</sup> per unit, enabling dense integration around thermal hotspots. A novel voltage calibration method ensures accurate temperature extraction. The measurement results demonstrate three-sigma errors within ±0.1 °C in the critical range of 75 °C to 95 °C and +1.29/−1.08 °C outside this range, confirming the sensor’s high accuracy and suitability for advanced thermal management applications. |
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| ISSN: | 2073-431X |