Self‐Powered Broadband Photodetectors Based on Si/SnS2 and Si/SnSe2 p–n Heterostructures
Abstract The escalating interest in 2D nanoflakes‐based group‐IVA metal chalcogenides is attributed to their noteworthy properties, such as high electron mobility, exceptional chemical stability, and applicability across diverse scientific disciplines such as sensing, energy storage applications, su...
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Wiley-VCH
2024-11-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400164 |
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| author | Mahesh Kumar Bohr‐Ran Huang Adhimoorthy Saravanan Hui Sun Sheng‐Chi Chen |
| author_facet | Mahesh Kumar Bohr‐Ran Huang Adhimoorthy Saravanan Hui Sun Sheng‐Chi Chen |
| author_sort | Mahesh Kumar |
| collection | DOAJ |
| description | Abstract The escalating interest in 2D nanoflakes‐based group‐IVA metal chalcogenides is attributed to their noteworthy properties, such as high electron mobility, exceptional chemical stability, and applicability across diverse scientific disciplines such as sensing, energy storage applications, supercapacitors, and lithium‐ion batteries. This study introduces an innovative self‐powered photodetector based on 2D metal chalcogenide nanoflakes (SnS2 and SnSe2) formed into nanoflowers on a silicon substrate through the hydrothermal method. The amalgamation of the light‐induced pyroelectric effect into the SnS2 photodetector achieves impressive enhancement ratios of 353%, 425%, 351%, 662%, and 153% in photoresponsivity and detectivity compared to the photovoltaic effect at 365, 456, 532, 632, and 850 nm, respectively, at zero bias. The SnSe2 photodetector achieved responsivity values of 14, 82, 36, 4, and 28 mA W−1 at the corresponding wavelengths in self‐powered mode. The SnSe2 device exhibits superior photosensitivity of 30792%, 55692%, 28803%, 9678%, and 68587% at the corresponding wavelengths, under zero bias. In addition, the photocurrent response caused by the photovoltaic‐pyroelectric effect is thoroughly defined, and the impacts of light wavelength, power intensity, and bias voltage are studied. This study presents a cutting‐edge self‐powered broadband photodetector utilizing pyroelectric materials and opens possibilities for designing high‐performance, fast photodetectors based on the pyro‐phototronic effect. |
| format | Article |
| id | doaj-art-4579289e4d0d4fcab74c125b327e4fc0 |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2024-11-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-4579289e4d0d4fcab74c125b327e4fc02024-11-09T18:01:02ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-11-011011n/an/a10.1002/aelm.202400164Self‐Powered Broadband Photodetectors Based on Si/SnS2 and Si/SnSe2 p–n HeterostructuresMahesh Kumar0Bohr‐Ran Huang1Adhimoorthy Saravanan2Hui Sun3Sheng‐Chi Chen4Graduate Institute of Electro‐Optical Engineering and Department of Electronic and Computer, Engineering National Taiwan University of Science and Technology Taipei 106 TaiwanGraduate Institute of Electro‐Optical Engineering and Department of Electronic and Computer, Engineering National Taiwan University of Science and Technology Taipei 106 TaiwanGraduate Institute of Electro‐Optical Engineering and Department of Electronic and Computer, Engineering National Taiwan University of Science and Technology Taipei 106 TaiwanSchool of Space Science and Physics Shandong University Weihai 264209 ChinaDepartment of Materials Engineering and Center for Plasma and Thin Film Technologies Ming Chi University of Technology New Taipei City 243 TaiwanAbstract The escalating interest in 2D nanoflakes‐based group‐IVA metal chalcogenides is attributed to their noteworthy properties, such as high electron mobility, exceptional chemical stability, and applicability across diverse scientific disciplines such as sensing, energy storage applications, supercapacitors, and lithium‐ion batteries. This study introduces an innovative self‐powered photodetector based on 2D metal chalcogenide nanoflakes (SnS2 and SnSe2) formed into nanoflowers on a silicon substrate through the hydrothermal method. The amalgamation of the light‐induced pyroelectric effect into the SnS2 photodetector achieves impressive enhancement ratios of 353%, 425%, 351%, 662%, and 153% in photoresponsivity and detectivity compared to the photovoltaic effect at 365, 456, 532, 632, and 850 nm, respectively, at zero bias. The SnSe2 photodetector achieved responsivity values of 14, 82, 36, 4, and 28 mA W−1 at the corresponding wavelengths in self‐powered mode. The SnSe2 device exhibits superior photosensitivity of 30792%, 55692%, 28803%, 9678%, and 68587% at the corresponding wavelengths, under zero bias. In addition, the photocurrent response caused by the photovoltaic‐pyroelectric effect is thoroughly defined, and the impacts of light wavelength, power intensity, and bias voltage are studied. This study presents a cutting‐edge self‐powered broadband photodetector utilizing pyroelectric materials and opens possibilities for designing high‐performance, fast photodetectors based on the pyro‐phototronic effect.https://doi.org/10.1002/aelm.202400164broadband photodetectorspyro‐phototronic effectSi/metal chalcogenideSnS2 photodetectorSnSe2 self‐powered photodetector |
| spellingShingle | Mahesh Kumar Bohr‐Ran Huang Adhimoorthy Saravanan Hui Sun Sheng‐Chi Chen Self‐Powered Broadband Photodetectors Based on Si/SnS2 and Si/SnSe2 p–n Heterostructures Advanced Electronic Materials broadband photodetectors pyro‐phototronic effect Si/metal chalcogenide SnS2 photodetector SnSe2 self‐powered photodetector |
| title | Self‐Powered Broadband Photodetectors Based on Si/SnS2 and Si/SnSe2 p–n Heterostructures |
| title_full | Self‐Powered Broadband Photodetectors Based on Si/SnS2 and Si/SnSe2 p–n Heterostructures |
| title_fullStr | Self‐Powered Broadband Photodetectors Based on Si/SnS2 and Si/SnSe2 p–n Heterostructures |
| title_full_unstemmed | Self‐Powered Broadband Photodetectors Based on Si/SnS2 and Si/SnSe2 p–n Heterostructures |
| title_short | Self‐Powered Broadband Photodetectors Based on Si/SnS2 and Si/SnSe2 p–n Heterostructures |
| title_sort | self powered broadband photodetectors based on si sns2 and si snse2 p n heterostructures |
| topic | broadband photodetectors pyro‐phototronic effect Si/metal chalcogenide SnS2 photodetector SnSe2 self‐powered photodetector |
| url | https://doi.org/10.1002/aelm.202400164 |
| work_keys_str_mv | AT maheshkumar selfpoweredbroadbandphotodetectorsbasedonsisns2andsisnse2pnheterostructures AT bohrranhuang selfpoweredbroadbandphotodetectorsbasedonsisns2andsisnse2pnheterostructures AT adhimoorthysaravanan selfpoweredbroadbandphotodetectorsbasedonsisns2andsisnse2pnheterostructures AT huisun selfpoweredbroadbandphotodetectorsbasedonsisns2andsisnse2pnheterostructures AT shengchichen selfpoweredbroadbandphotodetectorsbasedonsisns2andsisnse2pnheterostructures |