Effect of wafer resistivity and light intensity on the topography of porous silicon surfaces produced by photo chemical method
This study includes the effect of wafer resistivity and intensity of light on topography of porous silicon surfaces which produced by photo chemical etching method, the results showed that changing of the resistivity led to change the porosity, where it found the porous silicon layer be less of h...
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| Format: | Article |
| Language: | English |
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Tikrit University
2023-01-01
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| Series: | Tikrit Journal of Pure Science |
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| Online Access: | https://tjpsj.org/index.php/tjps/article/view/682 |
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| author | Amjad Hussen Jassem Hanaa E. Jassem Shihab Ahmaed Kalaf Najat A. Dahham |
| author_facet | Amjad Hussen Jassem Hanaa E. Jassem Shihab Ahmaed Kalaf Najat A. Dahham |
| author_sort | Amjad Hussen Jassem |
| collection | DOAJ |
| description |
This study includes the effect of wafer resistivity and intensity of light on topography of porous silicon surfaces which produced by photo chemical etching method, the results showed that changing of the resistivity led to change the porosity, where it found the porous silicon layer be less of high value resistivity.
Once all the wafers have same resistivity's value that’s found the light intensity effect on porosity, the less value of porosity produced by the less value of intensity light focused.
The production of Nano crystalline silicon structures and control of their production conditions is the first step to control the properties of the devices (detectors, diodes, solar cells, sensors) and their appropriate applications. Ultimately, this is important in promoting research and development of renewable energy.
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| format | Article |
| id | doaj-art-452e6bb021bd4e6da4dcb2bc81ba6587 |
| institution | Kabale University |
| issn | 1813-1662 2415-1726 |
| language | English |
| publishDate | 2023-01-01 |
| publisher | Tikrit University |
| record_format | Article |
| series | Tikrit Journal of Pure Science |
| spelling | doaj-art-452e6bb021bd4e6da4dcb2bc81ba65872025-08-20T03:49:55ZengTikrit UniversityTikrit Journal of Pure Science1813-16622415-17262023-01-0123610.25130/tjps.v23i6.682Effect of wafer resistivity and light intensity on the topography of porous silicon surfaces produced by photo chemical methodAmjad Hussen JassemHanaa E. JassemShihab Ahmaed KalafNajat A. Dahham This study includes the effect of wafer resistivity and intensity of light on topography of porous silicon surfaces which produced by photo chemical etching method, the results showed that changing of the resistivity led to change the porosity, where it found the porous silicon layer be less of high value resistivity. Once all the wafers have same resistivity's value that’s found the light intensity effect on porosity, the less value of porosity produced by the less value of intensity light focused. The production of Nano crystalline silicon structures and control of their production conditions is the first step to control the properties of the devices (detectors, diodes, solar cells, sensors) and their appropriate applications. Ultimately, this is important in promoting research and development of renewable energy. https://tjpsj.org/index.php/tjps/article/view/682The etchingroughnessporous siliconexitonPhotochemical etchingquantum confinement |
| spellingShingle | Amjad Hussen Jassem Hanaa E. Jassem Shihab Ahmaed Kalaf Najat A. Dahham Effect of wafer resistivity and light intensity on the topography of porous silicon surfaces produced by photo chemical method Tikrit Journal of Pure Science The etching roughness porous silicon exiton Photochemical etching quantum confinement |
| title | Effect of wafer resistivity and light intensity on the topography of porous silicon surfaces produced by photo chemical method |
| title_full | Effect of wafer resistivity and light intensity on the topography of porous silicon surfaces produced by photo chemical method |
| title_fullStr | Effect of wafer resistivity and light intensity on the topography of porous silicon surfaces produced by photo chemical method |
| title_full_unstemmed | Effect of wafer resistivity and light intensity on the topography of porous silicon surfaces produced by photo chemical method |
| title_short | Effect of wafer resistivity and light intensity on the topography of porous silicon surfaces produced by photo chemical method |
| title_sort | effect of wafer resistivity and light intensity on the topography of porous silicon surfaces produced by photo chemical method |
| topic | The etching roughness porous silicon exiton Photochemical etching quantum confinement |
| url | https://tjpsj.org/index.php/tjps/article/view/682 |
| work_keys_str_mv | AT amjadhussenjassem effectofwaferresistivityandlightintensityonthetopographyofporoussiliconsurfacesproducedbyphotochemicalmethod AT hanaaejassem effectofwaferresistivityandlightintensityonthetopographyofporoussiliconsurfacesproducedbyphotochemicalmethod AT shihabahmaedkalaf effectofwaferresistivityandlightintensityonthetopographyofporoussiliconsurfacesproducedbyphotochemicalmethod AT najatadahham effectofwaferresistivityandlightintensityonthetopographyofporoussiliconsurfacesproducedbyphotochemicalmethod |