Wide-Gap p-μc-Si1-xOx:H Films and Their Application to Amorphous Silicon Solar Cells

Optimization of p-type hydrogenated microcrystalline silicon oxide thin films (p-μc-Si1-xOx:H) by very high frequency plasma enhanced chemical vapor deposition 40 MHz method for use as a p-layer of a-Si:H solar cells was performed. The properties of p-μc-Si1-xOx:H films were characterized by conduct...

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Main Authors: Taweewat Krajangsang, Sorapong Inthisang, Aswin Hongsingthong, Amornrat Limmanee, Jaran Sritharathikhun, Kobsak Sriprapha
Format: Article
Language:English
Published: Wiley 2013-01-01
Series:International Journal of Photoenergy
Online Access:http://dx.doi.org/10.1155/2013/958326
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author Taweewat Krajangsang
Sorapong Inthisang
Aswin Hongsingthong
Amornrat Limmanee
Jaran Sritharathikhun
Kobsak Sriprapha
author_facet Taweewat Krajangsang
Sorapong Inthisang
Aswin Hongsingthong
Amornrat Limmanee
Jaran Sritharathikhun
Kobsak Sriprapha
author_sort Taweewat Krajangsang
collection DOAJ
description Optimization of p-type hydrogenated microcrystalline silicon oxide thin films (p-μc-Si1-xOx:H) by very high frequency plasma enhanced chemical vapor deposition 40 MHz method for use as a p-layer of a-Si:H solar cells was performed. The properties of p-μc-Si1-xOx:H films were characterized by conductivity, Raman scattering spectroscopy, and spectroscopic ellipsometry. The wide optical band gap p-μc-Si1-xOx:H films were optimized by CO2/SiH4 ratio and H2/SiH4 dilution. Besides, the effects of wide-gap p-μc-Si1-xOx:H layer on the performance of a-Si:H solar cells with various optical band gaps of p-layer were also investigated. Furthermore, improvements of open circuit voltage, short circuit current, and performance of the solar cells by using the effective wide-gap p-μc-Si1-xOx:H were observed in this study. These results indicate that wide-gap p-μc-Si1-xOx:H is promising to use as window layer in a-Si:H solar cells.
format Article
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institution Kabale University
issn 1110-662X
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language English
publishDate 2013-01-01
publisher Wiley
record_format Article
series International Journal of Photoenergy
spelling doaj-art-451af0bd804748bcae887a5b239a6fa72025-02-03T06:01:34ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2013-01-01201310.1155/2013/958326958326Wide-Gap p-μc-Si1-xOx:H Films and Their Application to Amorphous Silicon Solar CellsTaweewat Krajangsang0Sorapong Inthisang1Aswin Hongsingthong2Amornrat Limmanee3Jaran Sritharathikhun4Kobsak Sriprapha5Solar Energy Technology Laboratory, National Electronics and Computer Technology Center, National Science and Technology Development Agency, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, National Science and Technology Development Agency, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, National Science and Technology Development Agency, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, National Science and Technology Development Agency, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, National Science and Technology Development Agency, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, National Science and Technology Development Agency, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandOptimization of p-type hydrogenated microcrystalline silicon oxide thin films (p-μc-Si1-xOx:H) by very high frequency plasma enhanced chemical vapor deposition 40 MHz method for use as a p-layer of a-Si:H solar cells was performed. The properties of p-μc-Si1-xOx:H films were characterized by conductivity, Raman scattering spectroscopy, and spectroscopic ellipsometry. The wide optical band gap p-μc-Si1-xOx:H films were optimized by CO2/SiH4 ratio and H2/SiH4 dilution. Besides, the effects of wide-gap p-μc-Si1-xOx:H layer on the performance of a-Si:H solar cells with various optical band gaps of p-layer were also investigated. Furthermore, improvements of open circuit voltage, short circuit current, and performance of the solar cells by using the effective wide-gap p-μc-Si1-xOx:H were observed in this study. These results indicate that wide-gap p-μc-Si1-xOx:H is promising to use as window layer in a-Si:H solar cells.http://dx.doi.org/10.1155/2013/958326
spellingShingle Taweewat Krajangsang
Sorapong Inthisang
Aswin Hongsingthong
Amornrat Limmanee
Jaran Sritharathikhun
Kobsak Sriprapha
Wide-Gap p-μc-Si1-xOx:H Films and Their Application to Amorphous Silicon Solar Cells
International Journal of Photoenergy
title Wide-Gap p-μc-Si1-xOx:H Films and Their Application to Amorphous Silicon Solar Cells
title_full Wide-Gap p-μc-Si1-xOx:H Films and Their Application to Amorphous Silicon Solar Cells
title_fullStr Wide-Gap p-μc-Si1-xOx:H Films and Their Application to Amorphous Silicon Solar Cells
title_full_unstemmed Wide-Gap p-μc-Si1-xOx:H Films and Their Application to Amorphous Silicon Solar Cells
title_short Wide-Gap p-μc-Si1-xOx:H Films and Their Application to Amorphous Silicon Solar Cells
title_sort wide gap p μc si1 xox h films and their application to amorphous silicon solar cells
url http://dx.doi.org/10.1155/2013/958326
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