Wide-Gap p-μc-Si1-xOx:H Films and Their Application to Amorphous Silicon Solar Cells
Optimization of p-type hydrogenated microcrystalline silicon oxide thin films (p-μc-Si1-xOx:H) by very high frequency plasma enhanced chemical vapor deposition 40 MHz method for use as a p-layer of a-Si:H solar cells was performed. The properties of p-μc-Si1-xOx:H films were characterized by conduct...
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Language: | English |
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Wiley
2013-01-01
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Series: | International Journal of Photoenergy |
Online Access: | http://dx.doi.org/10.1155/2013/958326 |
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author | Taweewat Krajangsang Sorapong Inthisang Aswin Hongsingthong Amornrat Limmanee Jaran Sritharathikhun Kobsak Sriprapha |
author_facet | Taweewat Krajangsang Sorapong Inthisang Aswin Hongsingthong Amornrat Limmanee Jaran Sritharathikhun Kobsak Sriprapha |
author_sort | Taweewat Krajangsang |
collection | DOAJ |
description | Optimization of p-type hydrogenated microcrystalline silicon oxide thin films (p-μc-Si1-xOx:H) by very high frequency plasma enhanced chemical vapor deposition 40 MHz method for use as a p-layer of a-Si:H solar cells was performed. The properties of p-μc-Si1-xOx:H films were characterized by conductivity, Raman scattering spectroscopy, and spectroscopic ellipsometry. The wide optical band gap p-μc-Si1-xOx:H films were optimized by CO2/SiH4 ratio and H2/SiH4 dilution. Besides, the effects of wide-gap p-μc-Si1-xOx:H layer on the performance of a-Si:H solar cells with various optical band gaps of p-layer were also investigated. Furthermore, improvements of open circuit voltage, short circuit current, and performance of the solar cells by using the effective wide-gap p-μc-Si1-xOx:H were observed in this study. These results indicate that wide-gap p-μc-Si1-xOx:H is promising to use as window layer in a-Si:H solar cells. |
format | Article |
id | doaj-art-451af0bd804748bcae887a5b239a6fa7 |
institution | Kabale University |
issn | 1110-662X 1687-529X |
language | English |
publishDate | 2013-01-01 |
publisher | Wiley |
record_format | Article |
series | International Journal of Photoenergy |
spelling | doaj-art-451af0bd804748bcae887a5b239a6fa72025-02-03T06:01:34ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2013-01-01201310.1155/2013/958326958326Wide-Gap p-μc-Si1-xOx:H Films and Their Application to Amorphous Silicon Solar CellsTaweewat Krajangsang0Sorapong Inthisang1Aswin Hongsingthong2Amornrat Limmanee3Jaran Sritharathikhun4Kobsak Sriprapha5Solar Energy Technology Laboratory, National Electronics and Computer Technology Center, National Science and Technology Development Agency, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, National Science and Technology Development Agency, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, National Science and Technology Development Agency, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, National Science and Technology Development Agency, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, National Science and Technology Development Agency, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandSolar Energy Technology Laboratory, National Electronics and Computer Technology Center, National Science and Technology Development Agency, 112 Thailand Science Park, Phahonyothin Road, Klong 1, Klong Luang, Pathumthani 12120, ThailandOptimization of p-type hydrogenated microcrystalline silicon oxide thin films (p-μc-Si1-xOx:H) by very high frequency plasma enhanced chemical vapor deposition 40 MHz method for use as a p-layer of a-Si:H solar cells was performed. The properties of p-μc-Si1-xOx:H films were characterized by conductivity, Raman scattering spectroscopy, and spectroscopic ellipsometry. The wide optical band gap p-μc-Si1-xOx:H films were optimized by CO2/SiH4 ratio and H2/SiH4 dilution. Besides, the effects of wide-gap p-μc-Si1-xOx:H layer on the performance of a-Si:H solar cells with various optical band gaps of p-layer were also investigated. Furthermore, improvements of open circuit voltage, short circuit current, and performance of the solar cells by using the effective wide-gap p-μc-Si1-xOx:H were observed in this study. These results indicate that wide-gap p-μc-Si1-xOx:H is promising to use as window layer in a-Si:H solar cells.http://dx.doi.org/10.1155/2013/958326 |
spellingShingle | Taweewat Krajangsang Sorapong Inthisang Aswin Hongsingthong Amornrat Limmanee Jaran Sritharathikhun Kobsak Sriprapha Wide-Gap p-μc-Si1-xOx:H Films and Their Application to Amorphous Silicon Solar Cells International Journal of Photoenergy |
title | Wide-Gap p-μc-Si1-xOx:H Films and Their Application to Amorphous Silicon Solar Cells |
title_full | Wide-Gap p-μc-Si1-xOx:H Films and Their Application to Amorphous Silicon Solar Cells |
title_fullStr | Wide-Gap p-μc-Si1-xOx:H Films and Their Application to Amorphous Silicon Solar Cells |
title_full_unstemmed | Wide-Gap p-μc-Si1-xOx:H Films and Their Application to Amorphous Silicon Solar Cells |
title_short | Wide-Gap p-μc-Si1-xOx:H Films and Their Application to Amorphous Silicon Solar Cells |
title_sort | wide gap p μc si1 xox h films and their application to amorphous silicon solar cells |
url | http://dx.doi.org/10.1155/2013/958326 |
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