Aslam, M., Chang, S., Chen, Y., Lee, Y., Li, Y., & Lee, W. Mechanism of Threshold Voltage Instability in Double Gate α-IGZO Nanosheet TFT Under Bias and Temperature Stress. IEEE.
Chicago Style (17th ed.) CitationAslam, Muhammad, Shu-Wei Chang, Yi-Ho Chen, Yao-Jen Lee, Yiming Li, and Wen-Hsi Lee. Mechanism of Threshold Voltage Instability in Double Gate α-IGZO Nanosheet TFT Under Bias and Temperature Stress. IEEE.
MLA (9th ed.) CitationAslam, Muhammad, et al. Mechanism of Threshold Voltage Instability in Double Gate α-IGZO Nanosheet TFT Under Bias and Temperature Stress. IEEE.
Warning: These citations may not always be 100% accurate.