Design of a Novel W-Sinker RF LDMOS
A novel RF LDMOS device structure and corresponding manufacturing process are presented in this paper. Deep trench W-sinker (tungsten sinker) is employed in this technology to replace the traditional heavily doped diffusion sinker which can shrink chip size of the LDMOS transistor by more than 30% a...
Saved in:
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2015-01-01
|
| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2015/312646 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832553391217180672 |
|---|---|
| author | Xiangming Xu Han Yu Jingfeng Huang Chun Wang Wei Ji Zhengliang Zhou Ying Cai Yong Wang Pingliang Li Peng-Fei Wang David Wei Zhang |
| author_facet | Xiangming Xu Han Yu Jingfeng Huang Chun Wang Wei Ji Zhengliang Zhou Ying Cai Yong Wang Pingliang Li Peng-Fei Wang David Wei Zhang |
| author_sort | Xiangming Xu |
| collection | DOAJ |
| description | A novel RF LDMOS device structure and corresponding manufacturing process are presented in this paper. Deep trench W-sinker (tungsten sinker) is employed in this technology to replace the traditional heavily doped diffusion sinker which can shrink chip size of the LDMOS transistor by more than 30% and improve power density. Furthermore, the W-sinker structure reduces the parasitic resistance and inductance and improves thermal conductivity of the device as well. Combined with the adoption of the techniques, like grounded shield, step gate oxide, LDD optimization, and so forth, an advanced technology for RF LDMOS based on conventional 0.35 μm CMOS technology is well established. An F+A power amplifier product with frequency range of 1.8–2.1 GHz is developed for the application of 4G LTE base station and industry leading performance is achieved. The qualification results show that the device reliability and ruggedness can also meet requirement of the application. |
| format | Article |
| id | doaj-art-44fe10aa78a24d739051b9fc8890ee56 |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2015-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-44fe10aa78a24d739051b9fc8890ee562025-02-03T05:54:01ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242015-01-01201510.1155/2015/312646312646Design of a Novel W-Sinker RF LDMOSXiangming Xu0Han Yu1Jingfeng Huang2Chun Wang3Wei Ji4Zhengliang Zhou5Ying Cai6Yong Wang7Pingliang Li8Peng-Fei Wang9David Wei Zhang10State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaHuahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, ChinaHuahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, ChinaHuahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, ChinaHuahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, ChinaHuahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, ChinaHuahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaA novel RF LDMOS device structure and corresponding manufacturing process are presented in this paper. Deep trench W-sinker (tungsten sinker) is employed in this technology to replace the traditional heavily doped diffusion sinker which can shrink chip size of the LDMOS transistor by more than 30% and improve power density. Furthermore, the W-sinker structure reduces the parasitic resistance and inductance and improves thermal conductivity of the device as well. Combined with the adoption of the techniques, like grounded shield, step gate oxide, LDD optimization, and so forth, an advanced technology for RF LDMOS based on conventional 0.35 μm CMOS technology is well established. An F+A power amplifier product with frequency range of 1.8–2.1 GHz is developed for the application of 4G LTE base station and industry leading performance is achieved. The qualification results show that the device reliability and ruggedness can also meet requirement of the application.http://dx.doi.org/10.1155/2015/312646 |
| spellingShingle | Xiangming Xu Han Yu Jingfeng Huang Chun Wang Wei Ji Zhengliang Zhou Ying Cai Yong Wang Pingliang Li Peng-Fei Wang David Wei Zhang Design of a Novel W-Sinker RF LDMOS Advances in Condensed Matter Physics |
| title | Design of a Novel W-Sinker RF LDMOS |
| title_full | Design of a Novel W-Sinker RF LDMOS |
| title_fullStr | Design of a Novel W-Sinker RF LDMOS |
| title_full_unstemmed | Design of a Novel W-Sinker RF LDMOS |
| title_short | Design of a Novel W-Sinker RF LDMOS |
| title_sort | design of a novel w sinker rf ldmos |
| url | http://dx.doi.org/10.1155/2015/312646 |
| work_keys_str_mv | AT xiangmingxu designofanovelwsinkerrfldmos AT hanyu designofanovelwsinkerrfldmos AT jingfenghuang designofanovelwsinkerrfldmos AT chunwang designofanovelwsinkerrfldmos AT weiji designofanovelwsinkerrfldmos AT zhengliangzhou designofanovelwsinkerrfldmos AT yingcai designofanovelwsinkerrfldmos AT yongwang designofanovelwsinkerrfldmos AT pingliangli designofanovelwsinkerrfldmos AT pengfeiwang designofanovelwsinkerrfldmos AT davidweizhang designofanovelwsinkerrfldmos |