Study on electronic transport and optoelectronic properties of semiconductor 2D Ge₂Y₂ (Y = As, P, N)

Abstract Several conceptual nanodevices based on the four-atom-layer α- and β-Ge2Y2 are constructed, and their electronic transport and photoelectronic properties are revealed by means of first-principles calculations. Our results demonstrate that the Ge2Y2-based p–n junction diodes show a great rec...

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Bibliographic Details
Main Authors: Jiabao Liao, Nan Fei, Shujin Guo, Yipeng An, Guoping Zhao
Format: Article
Language:English
Published: Nature Portfolio 2025-04-01
Series:Scientific Reports
Subjects:
Online Access:https://doi.org/10.1038/s41598-025-98824-0
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