Study on electronic transport and optoelectronic properties of semiconductor 2D Ge₂Y₂ (Y = As, P, N)
Abstract Several conceptual nanodevices based on the four-atom-layer α- and β-Ge2Y2 are constructed, and their electronic transport and photoelectronic properties are revealed by means of first-principles calculations. Our results demonstrate that the Ge2Y2-based p–n junction diodes show a great rec...
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| Language: | English |
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Nature Portfolio
2025-04-01
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| Series: | Scientific Reports |
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| Online Access: | https://doi.org/10.1038/s41598-025-98824-0 |
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| author | Jiabao Liao Nan Fei Shujin Guo Yipeng An Guoping Zhao |
| author_facet | Jiabao Liao Nan Fei Shujin Guo Yipeng An Guoping Zhao |
| author_sort | Jiabao Liao |
| collection | DOAJ |
| description | Abstract Several conceptual nanodevices based on the four-atom-layer α- and β-Ge2Y2 are constructed, and their electronic transport and photoelectronic properties are revealed by means of first-principles calculations. Our results demonstrate that the Ge2Y2-based p–n junction diodes show a great rectifying effect with high rectification ratio. Their p–i–n junction transistors show a field-effect behavior with better rectifying effect and stronger electronical anisotropy. Moreover, the Ge2Y2 monolayers have strong photoelectronic response in the visible light region, displaying excellent photoelectronic properties in the photovoltaic materials and photoelectronic transistors. Our findings uncover the multi-functional features of four-atom-layer Ge2Y2 monolayers, promising their extensive applications as candidates for future flexible semiconductor devices. |
| format | Article |
| id | doaj-art-44ec4419c97e42eda030d513e5a3f400 |
| institution | DOAJ |
| issn | 2045-2322 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj-art-44ec4419c97e42eda030d513e5a3f4002025-08-20T02:55:25ZengNature PortfolioScientific Reports2045-23222025-04-0115111210.1038/s41598-025-98824-0Study on electronic transport and optoelectronic properties of semiconductor 2D Ge₂Y₂ (Y = As, P, N)Jiabao Liao0Nan Fei1Shujin Guo2Yipeng An3Guoping Zhao4College of Physics and Electronic Engineering, Sichuan Normal UniversityCollege of Physics and Electronic Engineering, Sichuan Normal UniversityCollege of Physics and Electronic Engineering, Sichuan Normal UniversitySchool of Physics, Henan Normal UniversityCollege of Physics and Electronic Engineering, Sichuan Normal UniversityAbstract Several conceptual nanodevices based on the four-atom-layer α- and β-Ge2Y2 are constructed, and their electronic transport and photoelectronic properties are revealed by means of first-principles calculations. Our results demonstrate that the Ge2Y2-based p–n junction diodes show a great rectifying effect with high rectification ratio. Their p–i–n junction transistors show a field-effect behavior with better rectifying effect and stronger electronical anisotropy. Moreover, the Ge2Y2 monolayers have strong photoelectronic response in the visible light region, displaying excellent photoelectronic properties in the photovoltaic materials and photoelectronic transistors. Our findings uncover the multi-functional features of four-atom-layer Ge2Y2 monolayers, promising their extensive applications as candidates for future flexible semiconductor devices.https://doi.org/10.1038/s41598-025-98824-0Two-dimensional materialsGe2Y2 monolayersNanodevicesTransport properties |
| spellingShingle | Jiabao Liao Nan Fei Shujin Guo Yipeng An Guoping Zhao Study on electronic transport and optoelectronic properties of semiconductor 2D Ge₂Y₂ (Y = As, P, N) Scientific Reports Two-dimensional materials Ge2Y2 monolayers Nanodevices Transport properties |
| title | Study on electronic transport and optoelectronic properties of semiconductor 2D Ge₂Y₂ (Y = As, P, N) |
| title_full | Study on electronic transport and optoelectronic properties of semiconductor 2D Ge₂Y₂ (Y = As, P, N) |
| title_fullStr | Study on electronic transport and optoelectronic properties of semiconductor 2D Ge₂Y₂ (Y = As, P, N) |
| title_full_unstemmed | Study on electronic transport and optoelectronic properties of semiconductor 2D Ge₂Y₂ (Y = As, P, N) |
| title_short | Study on electronic transport and optoelectronic properties of semiconductor 2D Ge₂Y₂ (Y = As, P, N) |
| title_sort | study on electronic transport and optoelectronic properties of semiconductor 2d ge₂y₂ y as p n |
| topic | Two-dimensional materials Ge2Y2 monolayers Nanodevices Transport properties |
| url | https://doi.org/10.1038/s41598-025-98824-0 |
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