Effects of CdS Buffer Layers on Photoluminescence Properties of Cu2ZnSnS4 Solar Cells
Cu2ZnSnS4 (CZTS) absorber layers grown by sputtering were investigated by photoluminescence before and after the chemical bath deposition of CdS in order to evaluate the possible passivation of point defects by Cd atoms at the absorber/buffer layer interface. According to the literature, a broad emi...
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| Format: | Article |
| Language: | English |
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Wiley
2015-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2015/583058 |
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| author | A. Le Donne S. Marchionna P. Garattini R. A. Mereu M. Acciarri S. Binetti |
| author_facet | A. Le Donne S. Marchionna P. Garattini R. A. Mereu M. Acciarri S. Binetti |
| author_sort | A. Le Donne |
| collection | DOAJ |
| description | Cu2ZnSnS4 (CZTS) absorber layers grown by sputtering were investigated by photoluminescence before and after the chemical bath deposition of CdS in order to evaluate the possible passivation of point defects by Cd atoms at the absorber/buffer layer interface. According to the literature, a broad emission around 1.21 eV was observed at low temperature under above bandgap excitation of the as-grown CZTS samples. Broad bands at 1.075 eV and 0.85 eV were detected for the first time under below bandgap excitation of the as-grown CZTS samples at low temperature, which were explained in terms of radiative transitions involving point defect-related levels determined in the literature by first-principles calculations. The emissions observed in the as-grown samples were monitored by both above and below bandgap excitations also in standard CZTS solar cells produced on the same layers. The obtained results suggest that, as in the case of Cu(In, Ga)Se2, Cd atoms passivate point defects at the absorber/buffer layer interface also in CZTS. |
| format | Article |
| id | doaj-art-446c668ccc2e4167be30ad34fea47cba |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2015-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-446c668ccc2e4167be30ad34fea47cba2025-02-03T01:09:46ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2015-01-01201510.1155/2015/583058583058Effects of CdS Buffer Layers on Photoluminescence Properties of Cu2ZnSnS4 Solar CellsA. Le Donne0S. Marchionna1P. Garattini2R. A. Mereu3M. Acciarri4S. Binetti5Department of Materials Science and Milano-Bicocca Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, 20125 Milan, ItalyRSE S.p.A., Via R. Rubattino 54, 20134 Milan, ItalyDepartment of Materials Science and Milano-Bicocca Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, 20125 Milan, ItalyDepartment of Materials Science and Milano-Bicocca Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, 20125 Milan, ItalyDepartment of Materials Science and Milano-Bicocca Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, 20125 Milan, ItalyDepartment of Materials Science and Milano-Bicocca Solar Energy Research Center (MIB-SOLAR), University of Milano-Bicocca, Via Cozzi 55, 20125 Milan, ItalyCu2ZnSnS4 (CZTS) absorber layers grown by sputtering were investigated by photoluminescence before and after the chemical bath deposition of CdS in order to evaluate the possible passivation of point defects by Cd atoms at the absorber/buffer layer interface. According to the literature, a broad emission around 1.21 eV was observed at low temperature under above bandgap excitation of the as-grown CZTS samples. Broad bands at 1.075 eV and 0.85 eV were detected for the first time under below bandgap excitation of the as-grown CZTS samples at low temperature, which were explained in terms of radiative transitions involving point defect-related levels determined in the literature by first-principles calculations. The emissions observed in the as-grown samples were monitored by both above and below bandgap excitations also in standard CZTS solar cells produced on the same layers. The obtained results suggest that, as in the case of Cu(In, Ga)Se2, Cd atoms passivate point defects at the absorber/buffer layer interface also in CZTS.http://dx.doi.org/10.1155/2015/583058 |
| spellingShingle | A. Le Donne S. Marchionna P. Garattini R. A. Mereu M. Acciarri S. Binetti Effects of CdS Buffer Layers on Photoluminescence Properties of Cu2ZnSnS4 Solar Cells International Journal of Photoenergy |
| title | Effects of CdS Buffer Layers on Photoluminescence Properties of Cu2ZnSnS4 Solar Cells |
| title_full | Effects of CdS Buffer Layers on Photoluminescence Properties of Cu2ZnSnS4 Solar Cells |
| title_fullStr | Effects of CdS Buffer Layers on Photoluminescence Properties of Cu2ZnSnS4 Solar Cells |
| title_full_unstemmed | Effects of CdS Buffer Layers on Photoluminescence Properties of Cu2ZnSnS4 Solar Cells |
| title_short | Effects of CdS Buffer Layers on Photoluminescence Properties of Cu2ZnSnS4 Solar Cells |
| title_sort | effects of cds buffer layers on photoluminescence properties of cu2znsns4 solar cells |
| url | http://dx.doi.org/10.1155/2015/583058 |
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