Pre-Melting-Assisted Impurity Control of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals in Edge-Defined Film-Fed Growth
This study reveals the significant role of the pre-melting process in growing high-quality (100) β-Ga<sub>2</sub>O<sub>3</sub> single crystals from 4N powder (99.995% purity) using the edge-defined film-fed growth (EFG) method. Among various bulk melt growth methods, the EFG...
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-12-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/15/1/7 |
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| author | A-Ran Shin Tae-Hun Gu Yun-Ji Shin Seong-Min Jeong Heesoo Lee Si-Young Bae |
| author_facet | A-Ran Shin Tae-Hun Gu Yun-Ji Shin Seong-Min Jeong Heesoo Lee Si-Young Bae |
| author_sort | A-Ran Shin |
| collection | DOAJ |
| description | This study reveals the significant role of the pre-melting process in growing high-quality (100) β-Ga<sub>2</sub>O<sub>3</sub> single crystals from 4N powder (99.995% purity) using the edge-defined film-fed growth (EFG) method. Among various bulk melt growth methods, the EFG method boasts a fast growth rate and the capability of growing multiple crystals simultaneously, thus offering high productivity. The pre-melting process notably enhanced the structural, optical, and electrical properties of the crystals by effectively eliminating impurities such as Si and Fe. Specifically, employing a 100% CO<sub>2</sub> atmosphere during pre-melting proved to be highly effective, reducing impurity concentrations and carrier scattering, which resulted in a decreased carrier concentration and an increased electron mobility in the grown Ga<sub>2</sub>O<sub>3</sub> single crystals. These results demonstrate that pre-melting is a crucial technique for substantially improving crystal quality, thereby promising better performance in β-Ga<sub>2</sub>O<sub>3</sub>-based device applications. |
| format | Article |
| id | doaj-art-44363f772a314067bfa3c67aeb655361 |
| institution | Kabale University |
| issn | 2079-4991 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj-art-44363f772a314067bfa3c67aeb6553612025-01-10T13:19:14ZengMDPI AGNanomaterials2079-49912024-12-01151710.3390/nano15010007Pre-Melting-Assisted Impurity Control of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals in Edge-Defined Film-Fed GrowthA-Ran Shin0Tae-Hun Gu1Yun-Ji Shin2Seong-Min Jeong3Heesoo Lee4Si-Young Bae5Semiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of KoreaDivision of Nanotechnology and Semiconductor Engineering, Pukyong National University, Busan 49315, Republic of KoreaSemiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of KoreaSemiconductor Materials Center, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of KoreaSchool of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of KoreaDivision of Nanotechnology and Semiconductor Engineering, Pukyong National University, Busan 49315, Republic of KoreaThis study reveals the significant role of the pre-melting process in growing high-quality (100) β-Ga<sub>2</sub>O<sub>3</sub> single crystals from 4N powder (99.995% purity) using the edge-defined film-fed growth (EFG) method. Among various bulk melt growth methods, the EFG method boasts a fast growth rate and the capability of growing multiple crystals simultaneously, thus offering high productivity. The pre-melting process notably enhanced the structural, optical, and electrical properties of the crystals by effectively eliminating impurities such as Si and Fe. Specifically, employing a 100% CO<sub>2</sub> atmosphere during pre-melting proved to be highly effective, reducing impurity concentrations and carrier scattering, which resulted in a decreased carrier concentration and an increased electron mobility in the grown Ga<sub>2</sub>O<sub>3</sub> single crystals. These results demonstrate that pre-melting is a crucial technique for substantially improving crystal quality, thereby promising better performance in β-Ga<sub>2</sub>O<sub>3</sub>-based device applications.https://www.mdpi.com/2079-4991/15/1/7gallium oxideimpuritypre-meltingEFGsingle crystal |
| spellingShingle | A-Ran Shin Tae-Hun Gu Yun-Ji Shin Seong-Min Jeong Heesoo Lee Si-Young Bae Pre-Melting-Assisted Impurity Control of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals in Edge-Defined Film-Fed Growth Nanomaterials gallium oxide impurity pre-melting EFG single crystal |
| title | Pre-Melting-Assisted Impurity Control of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals in Edge-Defined Film-Fed Growth |
| title_full | Pre-Melting-Assisted Impurity Control of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals in Edge-Defined Film-Fed Growth |
| title_fullStr | Pre-Melting-Assisted Impurity Control of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals in Edge-Defined Film-Fed Growth |
| title_full_unstemmed | Pre-Melting-Assisted Impurity Control of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals in Edge-Defined Film-Fed Growth |
| title_short | Pre-Melting-Assisted Impurity Control of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals in Edge-Defined Film-Fed Growth |
| title_sort | pre melting assisted impurity control of β ga sub 2 sub o sub 3 sub single crystals in edge defined film fed growth |
| topic | gallium oxide impurity pre-melting EFG single crystal |
| url | https://www.mdpi.com/2079-4991/15/1/7 |
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