QUALITY ANALYSIS OF THE GATE DIELECTRIC OF THE MOS-STRUCTURES BY CAPACITY-VOLTAGE CHARACTERISTICS
There were investigated the capacity-voltage characteristics of the MOS transistors, fabricated by the similar process charts, with the identical applied technological materials), however at various time (appropriately further in the text series A and series B). It was shown, that the measurements o...
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| Format: | Article |
| Language: | English |
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Belarusian National Technical University
2015-08-01
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| Series: | Приборы и методы измерений |
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| Online Access: | https://pimi.bntu.by/jour/article/view/211 |
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| author | V. B. Odzhaev A. N. Pyatlitski V. S. Prosolovich V. A. Filipenya S. V. Shvedau V. V. Chernyi V. Yu. Yavid Yu. N. Yankouski |
| author_facet | V. B. Odzhaev A. N. Pyatlitski V. S. Prosolovich V. A. Filipenya S. V. Shvedau V. V. Chernyi V. Yu. Yavid Yu. N. Yankouski |
| author_sort | V. B. Odzhaev |
| collection | DOAJ |
| description | There were investigated the capacity-voltage characteristics of the MOS transistors, fabricated by the similar process charts, with the identical applied technological materials), however at various time (appropriately further in the text series A and series B). It was shown, that the measurements of the capacityvoltage characteristics of the MOS structures make it possible to perform the quality diagnostics of the gate dielectric. The kind and shape of the measured characteristics are determined by the value of the additional positive charge in the dielectrics and density of the fast surface states on the Si-SiO2 interface, which correlate with the surface concentration of the technological impurities, adsorbed on the surface of the wafers in process of the devices fabrication, which makes it possible to make a conclusion about the quality of the applied materials and compliance of the manufacturing process. |
| format | Article |
| id | doaj-art-442b6cc88a7e48a0a831e2a4a14d1b3a |
| institution | Kabale University |
| issn | 2220-9506 2414-0473 |
| language | English |
| publishDate | 2015-08-01 |
| publisher | Belarusian National Technical University |
| record_format | Article |
| series | Приборы и методы измерений |
| spelling | doaj-art-442b6cc88a7e48a0a831e2a4a14d1b3a2025-08-20T04:00:07ZengBelarusian National Technical UniversityПриборы и методы измерений2220-95062414-04732015-08-01619498204QUALITY ANALYSIS OF THE GATE DIELECTRIC OF THE MOS-STRUCTURES BY CAPACITY-VOLTAGE CHARACTERISTICSV. B. Odzhaev0A. N. Pyatlitski1V. S. Prosolovich2V. A. Filipenya3S. V. Shvedau4V. V. Chernyi5V. Yu. Yavid6Yu. N. Yankouski7Belarusian State UniversityINTEGRAL – «INTEGRAL» Holding Managing Company, MinskBelarusian State UniversityINTEGRAL – «INTEGRAL» Holding Managing Company, MinskINTEGRAL – «INTEGRAL» Holding Managing Company, MinskBelarusian National Technical UniversityBelarusian State UniversityBelarusian State UniversityThere were investigated the capacity-voltage characteristics of the MOS transistors, fabricated by the similar process charts, with the identical applied technological materials), however at various time (appropriately further in the text series A and series B). It was shown, that the measurements of the capacityvoltage characteristics of the MOS structures make it possible to perform the quality diagnostics of the gate dielectric. The kind and shape of the measured characteristics are determined by the value of the additional positive charge in the dielectrics and density of the fast surface states on the Si-SiO2 interface, which correlate with the surface concentration of the technological impurities, adsorbed on the surface of the wafers in process of the devices fabrication, which makes it possible to make a conclusion about the quality of the applied materials and compliance of the manufacturing process.https://pimi.bntu.by/jour/article/view/211capacity-voltagemos-transistortechnological admixtures |
| spellingShingle | V. B. Odzhaev A. N. Pyatlitski V. S. Prosolovich V. A. Filipenya S. V. Shvedau V. V. Chernyi V. Yu. Yavid Yu. N. Yankouski QUALITY ANALYSIS OF THE GATE DIELECTRIC OF THE MOS-STRUCTURES BY CAPACITY-VOLTAGE CHARACTERISTICS Приборы и методы измерений capacity-voltage mos-transistor technological admixtures |
| title | QUALITY ANALYSIS OF THE GATE DIELECTRIC OF THE MOS-STRUCTURES BY CAPACITY-VOLTAGE CHARACTERISTICS |
| title_full | QUALITY ANALYSIS OF THE GATE DIELECTRIC OF THE MOS-STRUCTURES BY CAPACITY-VOLTAGE CHARACTERISTICS |
| title_fullStr | QUALITY ANALYSIS OF THE GATE DIELECTRIC OF THE MOS-STRUCTURES BY CAPACITY-VOLTAGE CHARACTERISTICS |
| title_full_unstemmed | QUALITY ANALYSIS OF THE GATE DIELECTRIC OF THE MOS-STRUCTURES BY CAPACITY-VOLTAGE CHARACTERISTICS |
| title_short | QUALITY ANALYSIS OF THE GATE DIELECTRIC OF THE MOS-STRUCTURES BY CAPACITY-VOLTAGE CHARACTERISTICS |
| title_sort | quality analysis of the gate dielectric of the mos structures by capacity voltage characteristics |
| topic | capacity-voltage mos-transistor technological admixtures |
| url | https://pimi.bntu.by/jour/article/view/211 |
| work_keys_str_mv | AT vbodzhaev qualityanalysisofthegatedielectricofthemosstructuresbycapacityvoltagecharacteristics AT anpyatlitski qualityanalysisofthegatedielectricofthemosstructuresbycapacityvoltagecharacteristics AT vsprosolovich qualityanalysisofthegatedielectricofthemosstructuresbycapacityvoltagecharacteristics AT vafilipenya qualityanalysisofthegatedielectricofthemosstructuresbycapacityvoltagecharacteristics AT svshvedau qualityanalysisofthegatedielectricofthemosstructuresbycapacityvoltagecharacteristics AT vvchernyi qualityanalysisofthegatedielectricofthemosstructuresbycapacityvoltagecharacteristics AT vyuyavid qualityanalysisofthegatedielectricofthemosstructuresbycapacityvoltagecharacteristics AT yunyankouski qualityanalysisofthegatedielectricofthemosstructuresbycapacityvoltagecharacteristics |