APA (7th ed.) Citation

Li, Y., Huang, Y., Li, J., Sun, H., & Guo, Z. Effect of Dual Al<sub>2</sub>O<sub>3</sub> MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT. MDPI AG.

Chicago Style (17th ed.) Citation

Li, Yuan, Yong Huang, Jing Li, Huiqing Sun, and Zhiyou Guo. Effect of Dual Al<sub>2</sub>O<sub>3</sub> MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT. MDPI AG.

MLA (9th ed.) Citation

Li, Yuan, et al. Effect of Dual Al<sub>2</sub>O<sub>3</sub> MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT. MDPI AG.

Warning: These citations may not always be 100% accurate.