The Investigation of Field Plate Design in 500 V High Voltage NLDMOS

The Investigation of Field Plate Design in 500 V High Voltage NLDMOS

This paper presents a 500 V high voltage NLDMOS with breakdown voltage (VBD) improved by field plate technology. Effect of metal field plate (MFP) and polysilicon field plate (PFP) on breakdown voltage improvement of high voltage NLDMOS is studied. The coeffect of MFP and PFP on drain side has also...

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Bibliographic Details
Main Authors: Donghua Liu, Xiangming Xu, Feng Jin, Wenting Duan, Huihui Wang, Jing Shi, Yuan Yao, Jun Hu, Wensheng Qian, Pengfei Wang, David Wei Zhang
Format: Article
Language:English
Published: Wiley 2015-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2015/834545
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