The Investigation of Field Plate Design in 500 V High Voltage NLDMOS
This paper presents a 500 V high voltage NLDMOS with breakdown voltage (VBD) improved by field plate technology. Effect of metal field plate (MFP) and polysilicon field plate (PFP) on breakdown voltage improvement of high voltage NLDMOS is studied. The coeffect of MFP and PFP on drain side has also...
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| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2015-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2015/834545 |
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| _version_ | 1832566198875717632 |
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| author | Donghua Liu Xiangming Xu Feng Jin Wenting Duan Huihui Wang Jing Shi Yuan Yao Jun Hu Wensheng Qian Pengfei Wang David Wei Zhang |
| author_facet | Donghua Liu Xiangming Xu Feng Jin Wenting Duan Huihui Wang Jing Shi Yuan Yao Jun Hu Wensheng Qian Pengfei Wang David Wei Zhang |
| author_sort | Donghua Liu |
| collection | DOAJ |
| description | This paper presents a 500 V high voltage NLDMOS with breakdown voltage (VBD) improved by field plate technology. Effect of metal field plate (MFP) and polysilicon field plate (PFP) on breakdown voltage improvement of high voltage NLDMOS is studied. The coeffect of MFP and PFP on drain side has also been investigated. A 500 V NLDMOS is demonstrated with a 37 μm drift length and optimized MFP and PFP design. Finally the breakdown voltage 590 V and excellent on-resistance performance (Rsp = 7.88 ohm * mm2) are achieved. |
| format | Article |
| id | doaj-art-43e69d16dc9d440aa7a4dd8154929be4 |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2015-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-43e69d16dc9d440aa7a4dd8154929be42025-02-03T01:04:50ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242015-01-01201510.1155/2015/834545834545The Investigation of Field Plate Design in 500 V High Voltage NLDMOSDonghua Liu0Xiangming Xu1Feng Jin2Wenting Duan3Huihui Wang4Jing Shi5Yuan Yao6Jun Hu7Wensheng Qian8Pengfei Wang9David Wei Zhang10State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaHuahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, ChinaHuahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, ChinaHuahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, ChinaHuahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, ChinaHuahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, ChinaHuahong Grace Semiconductor Manufacturing Corporation, Shanghai 201206, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaThis paper presents a 500 V high voltage NLDMOS with breakdown voltage (VBD) improved by field plate technology. Effect of metal field plate (MFP) and polysilicon field plate (PFP) on breakdown voltage improvement of high voltage NLDMOS is studied. The coeffect of MFP and PFP on drain side has also been investigated. A 500 V NLDMOS is demonstrated with a 37 μm drift length and optimized MFP and PFP design. Finally the breakdown voltage 590 V and excellent on-resistance performance (Rsp = 7.88 ohm * mm2) are achieved.http://dx.doi.org/10.1155/2015/834545 |
| spellingShingle | Donghua Liu Xiangming Xu Feng Jin Wenting Duan Huihui Wang Jing Shi Yuan Yao Jun Hu Wensheng Qian Pengfei Wang David Wei Zhang The Investigation of Field Plate Design in 500 V High Voltage NLDMOS Advances in Condensed Matter Physics |
| title | The Investigation of Field Plate Design in 500 V High Voltage NLDMOS |
| title_full | The Investigation of Field Plate Design in 500 V High Voltage NLDMOS |
| title_fullStr | The Investigation of Field Plate Design in 500 V High Voltage NLDMOS |
| title_full_unstemmed | The Investigation of Field Plate Design in 500 V High Voltage NLDMOS |
| title_short | The Investigation of Field Plate Design in 500 V High Voltage NLDMOS |
| title_sort | investigation of field plate design in 500 v high voltage nldmos |
| url | http://dx.doi.org/10.1155/2015/834545 |
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