A BaTiO3-based flexible ferroelectric capacitor for non-volatile memories
BaTiO3 (BTO) ferroelectric films, which are renowned for their lead-free compositions, superior stability, and absence of a wake-up effect, are promising candidate materials in the field of non-volatile memories. However, the prerequisites for high-temperature conditions in the fabrication of ferroe...
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Elsevier
2025-03-01
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| Series: | Journal of Materiomics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352847824000856 |
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| author | Xingpeng Liu Chunshu Wei Tangyou Sun Fabi Zhang Haiou Li Linsheng Liu Ying Peng Hezhang Li Min Hong |
| author_facet | Xingpeng Liu Chunshu Wei Tangyou Sun Fabi Zhang Haiou Li Linsheng Liu Ying Peng Hezhang Li Min Hong |
| author_sort | Xingpeng Liu |
| collection | DOAJ |
| description | BaTiO3 (BTO) ferroelectric films, which are renowned for their lead-free compositions, superior stability, and absence of a wake-up effect, are promising candidate materials in the field of non-volatile memories. However, the prerequisites for high-temperature conditions in the fabrication of ferroelectric thin films impose constraints on the substrate choice, which has limited the advancement in non-volatile memories based on single-crystal flexible BTO films with robust ferroelectric properties. Herein, a technique has been developed for the fabrication of flexible devices using a pulsed laser deposition system. BTO ferroelectric films have then been deposited onto a flexible mica substrate, with SrTiO3 (STO) serving as a buffer layer. The obtained flexible BTO devices exhibited excellent ferroelectricity, with a maximum polarization (2Pmax) of up to 42.58 μC/cm2 and a remnant polarization (2Pr) of up to 21.39 μC/cm2. Furthermore, even after 1000 bending cycles, the bipolar switching endurance remained high at 1012 cycles. After 104 s, the flexible BTO device still maintained excellent polarization characteristics. These results make the flexible BTO ferroelectric thin film a potential candidate for the next generation of non-volatile memories. |
| format | Article |
| id | doaj-art-43c4d3db1a3a4ddab2cc4953998ef66f |
| institution | Kabale University |
| issn | 2352-8478 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materiomics |
| spelling | doaj-art-43c4d3db1a3a4ddab2cc4953998ef66f2025-01-14T04:12:27ZengElsevierJournal of Materiomics2352-84782025-03-01112100870A BaTiO3-based flexible ferroelectric capacitor for non-volatile memoriesXingpeng Liu0Chunshu Wei1Tangyou Sun2Fabi Zhang3Haiou Li4Linsheng Liu5Ying Peng6Hezhang Li7Min Hong8Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin, 541004, ChinaGuangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin, 541004, ChinaGuangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin, 541004, ChinaGuangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin, 541004, ChinaGuangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin, 541004, ChinaSchool of Electronic and Information Engineering/School of Integrated Circuits, Guangxi Normal University, Guilin, 541004, ChinaGuangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin, 541004, China; Corresponding author.Department of Precision Instrument, Tsinghua University, Beijing, 100084, China; Corresponding author.Centre for Future Materials, and School of Engineering, University of Southern Queensland, Springfield Central, Queensland, 4300, Australia; Corresponding author.BaTiO3 (BTO) ferroelectric films, which are renowned for their lead-free compositions, superior stability, and absence of a wake-up effect, are promising candidate materials in the field of non-volatile memories. However, the prerequisites for high-temperature conditions in the fabrication of ferroelectric thin films impose constraints on the substrate choice, which has limited the advancement in non-volatile memories based on single-crystal flexible BTO films with robust ferroelectric properties. Herein, a technique has been developed for the fabrication of flexible devices using a pulsed laser deposition system. BTO ferroelectric films have then been deposited onto a flexible mica substrate, with SrTiO3 (STO) serving as a buffer layer. The obtained flexible BTO devices exhibited excellent ferroelectricity, with a maximum polarization (2Pmax) of up to 42.58 μC/cm2 and a remnant polarization (2Pr) of up to 21.39 μC/cm2. Furthermore, even after 1000 bending cycles, the bipolar switching endurance remained high at 1012 cycles. After 104 s, the flexible BTO device still maintained excellent polarization characteristics. These results make the flexible BTO ferroelectric thin film a potential candidate for the next generation of non-volatile memories.http://www.sciencedirect.com/science/article/pii/S2352847824000856BaTiO3 ferroelectric filmsNon-volatile memoryFlexible mica substrate |
| spellingShingle | Xingpeng Liu Chunshu Wei Tangyou Sun Fabi Zhang Haiou Li Linsheng Liu Ying Peng Hezhang Li Min Hong A BaTiO3-based flexible ferroelectric capacitor for non-volatile memories Journal of Materiomics BaTiO3 ferroelectric films Non-volatile memory Flexible mica substrate |
| title | A BaTiO3-based flexible ferroelectric capacitor for non-volatile memories |
| title_full | A BaTiO3-based flexible ferroelectric capacitor for non-volatile memories |
| title_fullStr | A BaTiO3-based flexible ferroelectric capacitor for non-volatile memories |
| title_full_unstemmed | A BaTiO3-based flexible ferroelectric capacitor for non-volatile memories |
| title_short | A BaTiO3-based flexible ferroelectric capacitor for non-volatile memories |
| title_sort | batio3 based flexible ferroelectric capacitor for non volatile memories |
| topic | BaTiO3 ferroelectric films Non-volatile memory Flexible mica substrate |
| url | http://www.sciencedirect.com/science/article/pii/S2352847824000856 |
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