Evaluation of Vertical Coherence Length, Twist and Microstrain of GaAs / Si Epilayers Using Modified Williamson-Hall Analysis
Modified Williamson-Hall (WH) analysis is used to determine the reliable values of the microstructures for Zincblende epilayers grown on non-polar substrates. Systematic high resolution X-ray diffraction (HRXRD) experiments are performed for several skew symmetric reflections which enable an accurat...
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| Format: | Article |
| Language: | English |
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Sumy State University
2014-06-01
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| Series: | Журнал нано- та електронної фізики |
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| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2014/2/articles/jnep_2014_V6_02010.pdf |
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| author | Ravi Kumar Tapas Ganguli Vijay Chouhan V.K. Dixit Puspen Mondal A.K. Srivastava C. Mukherjee T.K. Sharma |
| author_facet | Ravi Kumar Tapas Ganguli Vijay Chouhan V.K. Dixit Puspen Mondal A.K. Srivastava C. Mukherjee T.K. Sharma |
| author_sort | Ravi Kumar |
| collection | DOAJ |
| description | Modified Williamson-Hall (WH) analysis is used to determine the reliable values of the microstructures for Zincblende epilayers grown on non-polar substrates. Systematic high resolution X-ray diffraction (HRXRD) experiments are performed for several skew symmetric reflections which enable an accurate measurement of the values of vertical coherence length (VCL) and microstrain of GaAs epilayers grown on Si. Furthermore, a simple method based on the orientation of Burgers vector is proposed for estimating the ratio of tilt and twist. In this method, the twist can be found easily once tilt is known. It is rather quick and the measured values of twist are very similar to those which are otherwise estimated by acquiring numerous HRXRD scans along with tedious fitting procedures. Presence of 60 mixed dislocations is confirmed from the cross sectional high resolution transmission electron microscope images of GaAs / Si samples. Furthermore, the estimated value of VCL is equivalent to the layer thickness measured by the surface profiler. |
| format | Article |
| id | doaj-art-4356ba10174c4cac8b30c7ca89b249ad |
| institution | OA Journals |
| issn | 2077-6772 |
| language | English |
| publishDate | 2014-06-01 |
| publisher | Sumy State University |
| record_format | Article |
| series | Журнал нано- та електронної фізики |
| spelling | doaj-art-4356ba10174c4cac8b30c7ca89b249ad2025-08-20T02:37:58ZengSumy State UniversityЖурнал нано- та електронної фізики2077-67722014-06-016202010-102010-7Evaluation of Vertical Coherence Length, Twist and Microstrain of GaAs / Si Epilayers Using Modified Williamson-Hall AnalysisRavi Kumar0Tapas Ganguli1Vijay Chouhan2V.K. Dixit3Puspen Mondal4A.K. Srivastava5C. Mukherjee6T.K. Sharma7Semiconductor Physics & Devices Laboratory, Raja Ramanna Centre for Advanced Technology, Indore - 452013, IndiaIndus Synchrotron Utilisation Division, Raja Ramanna Centre for Advanced Technology, Indore - 452013, IndiaSemiconductor Physics & Devices Laboratory, Raja Ramanna Centre for Advanced Technology, Indore - 452013, IndiaSemiconductor Physics & Devices Laboratory, Raja Ramanna Centre for Advanced Technology, Indore - 452013, IndiaIndus Synchrotron Utilisation Division, Raja Ramanna Centre for Advanced Technology, Indore - 452013, IndiaIndus Synchrotron Utilisation Division, Raja Ramanna Centre for Advanced Technology, Indore - 452013, IndiaMechanical & Optical Support Section, Raja Ramanna Centre for Advanced Technology, Indore - 452013, IndiaSemiconductor Physics & Devices Laboratory, Raja Ramanna Centre for Advanced Technology, Indore - 452013, IndiaModified Williamson-Hall (WH) analysis is used to determine the reliable values of the microstructures for Zincblende epilayers grown on non-polar substrates. Systematic high resolution X-ray diffraction (HRXRD) experiments are performed for several skew symmetric reflections which enable an accurate measurement of the values of vertical coherence length (VCL) and microstrain of GaAs epilayers grown on Si. Furthermore, a simple method based on the orientation of Burgers vector is proposed for estimating the ratio of tilt and twist. In this method, the twist can be found easily once tilt is known. It is rather quick and the measured values of twist are very similar to those which are otherwise estimated by acquiring numerous HRXRD scans along with tedious fitting procedures. Presence of 60 mixed dislocations is confirmed from the cross sectional high resolution transmission electron microscope images of GaAs / Si samples. Furthermore, the estimated value of VCL is equivalent to the layer thickness measured by the surface profiler.http://jnep.sumdu.edu.ua/download/numbers/2014/2/articles/jnep_2014_V6_02010.pdfHRXRDGaAs / SiAnti Phase domainMicrostructureWilliamson-Hall analysi |
| spellingShingle | Ravi Kumar Tapas Ganguli Vijay Chouhan V.K. Dixit Puspen Mondal A.K. Srivastava C. Mukherjee T.K. Sharma Evaluation of Vertical Coherence Length, Twist and Microstrain of GaAs / Si Epilayers Using Modified Williamson-Hall Analysis Журнал нано- та електронної фізики HRXRD GaAs / Si Anti Phase domain Microstructure Williamson-Hall analysi |
| title | Evaluation of Vertical Coherence Length, Twist and Microstrain of GaAs / Si Epilayers Using Modified Williamson-Hall Analysis |
| title_full | Evaluation of Vertical Coherence Length, Twist and Microstrain of GaAs / Si Epilayers Using Modified Williamson-Hall Analysis |
| title_fullStr | Evaluation of Vertical Coherence Length, Twist and Microstrain of GaAs / Si Epilayers Using Modified Williamson-Hall Analysis |
| title_full_unstemmed | Evaluation of Vertical Coherence Length, Twist and Microstrain of GaAs / Si Epilayers Using Modified Williamson-Hall Analysis |
| title_short | Evaluation of Vertical Coherence Length, Twist and Microstrain of GaAs / Si Epilayers Using Modified Williamson-Hall Analysis |
| title_sort | evaluation of vertical coherence length twist and microstrain of gaas si epilayers using modified williamson hall analysis |
| topic | HRXRD GaAs / Si Anti Phase domain Microstructure Williamson-Hall analysi |
| url | http://jnep.sumdu.edu.ua/download/numbers/2014/2/articles/jnep_2014_V6_02010.pdf |
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