High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO<sub>2</sub>/SiO<sub>2</sub> Stacked Gate Dielectric in Trench Structures

High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO<sub>2</sub>/SiO<sub>2</sub> Stacked Gate Dielectric in Trench Structures

The progression of SiC MOSFET technology from planar to trench structures requires optimized gate oxide layers within the trench to enhance device performance. In this study, we investigated the interface characteristics of HfO<sub>2</sub> and SiO<sub>2</sub>/HfO<sub>2&...

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Bibliographic Details
Main Authors: Qimin Huang, Yunduo Guo, Anfeng Wang, Lin Gu, Zhenyu Wang, Chengxi Ding, Yi Shen, Hongping Ma, Qingchun Zhang
Format: Article
Language:English
Published: MDPI AG 2025-02-01
Series:Nanomaterials
Subjects:
trench MOS
ALD
high-k
gate dielectric
MIS capacitor
Online Access:https://www.mdpi.com/2079-4991/15/5/343
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