Comprehensive Review of Wide-Bandgap (WBG) Devices: SiC MOSFET and Its Failure Modes Affecting Reliability
Silicon carbide (SiC) MOSFETs, as a member of the emerging technology of wide-bandgap (WBG) semiconductors, are transforming high-power and high-temperature applications due to their superior electrical and thermal properties. Their potential to outperform traditional silicon-based devices, particul...
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| Format: | Article |
| Language: | English |
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MDPI AG
2025-03-01
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| Series: | Physchem |
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| Online Access: | https://www.mdpi.com/2673-7167/5/1/10 |
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| author | Ghulam Akbar Alessio Di Fatta Giuseppe Rizzo Guido Ala Pietro Romano Antonino Imburgia |
| author_facet | Ghulam Akbar Alessio Di Fatta Giuseppe Rizzo Guido Ala Pietro Romano Antonino Imburgia |
| author_sort | Ghulam Akbar |
| collection | DOAJ |
| description | Silicon carbide (SiC) MOSFETs, as a member of the emerging technology of wide-bandgap (WBG) semiconductors, are transforming high-power and high-temperature applications due to their superior electrical and thermal properties. Their potential to outperform traditional silicon-based devices, particularly in terms of efficiency and operational stability, has made them a popular choice for power electronics. However, reliability issues about numerous failure types, including gate-oxide degradation, threshold voltage instability, and body diode degeneration, remain serious challenges. This article critically evaluates the key failure mechanisms that affect SiC MOSFET reliability and their impact on device performance. Furthermore, this paper discusses current advances in SiC technology, including both improvements and continued dependability difficulties. Key areas of future study are suggested, with an emphasis on improved material characterization, thermal management, and creative device architecture to improve SiC MOSFET performance and long-term reliability. The insights presented will help to improve the design and testing processes required for SiC MOSFETs’ widespread use in critical high-power applications. |
| format | Article |
| id | doaj-art-43167df19cbc45708e850b894e7539ce |
| institution | Kabale University |
| issn | 2673-7167 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Physchem |
| spelling | doaj-art-43167df19cbc45708e850b894e7539ce2025-08-20T03:43:37ZengMDPI AGPhyschem2673-71672025-03-01511010.3390/physchem5010010Comprehensive Review of Wide-Bandgap (WBG) Devices: SiC MOSFET and Its Failure Modes Affecting ReliabilityGhulam Akbar0Alessio Di Fatta1Giuseppe Rizzo2Guido Ala3Pietro Romano4Antonino Imburgia5L.E.PR.E. High Voltage Laboratory, Department of Engineering, Università degli Studi di Palermo 1, 90133 Palermo, ItalyL.E.PR.E. High Voltage Laboratory, Department of Engineering, Università degli Studi di Palermo 1, 90133 Palermo, ItalyL.E.PR.E. High Voltage Laboratory, Department of Engineering, Università degli Studi di Palermo 1, 90133 Palermo, ItalyL.E.PR.E. High Voltage Laboratory, Department of Engineering, Università degli Studi di Palermo 1, 90133 Palermo, ItalyL.E.PR.E. High Voltage Laboratory, Department of Engineering, Università degli Studi di Palermo 1, 90133 Palermo, ItalyL.E.PR.E. High Voltage Laboratory, Department of Engineering, Università degli Studi di Palermo 1, 90133 Palermo, ItalySilicon carbide (SiC) MOSFETs, as a member of the emerging technology of wide-bandgap (WBG) semiconductors, are transforming high-power and high-temperature applications due to their superior electrical and thermal properties. Their potential to outperform traditional silicon-based devices, particularly in terms of efficiency and operational stability, has made them a popular choice for power electronics. However, reliability issues about numerous failure types, including gate-oxide degradation, threshold voltage instability, and body diode degeneration, remain serious challenges. This article critically evaluates the key failure mechanisms that affect SiC MOSFET reliability and their impact on device performance. Furthermore, this paper discusses current advances in SiC technology, including both improvements and continued dependability difficulties. Key areas of future study are suggested, with an emphasis on improved material characterization, thermal management, and creative device architecture to improve SiC MOSFET performance and long-term reliability. The insights presented will help to improve the design and testing processes required for SiC MOSFETs’ widespread use in critical high-power applications.https://www.mdpi.com/2673-7167/5/1/10WBG devicesSiC MOSFEToverviewfailure modes |
| spellingShingle | Ghulam Akbar Alessio Di Fatta Giuseppe Rizzo Guido Ala Pietro Romano Antonino Imburgia Comprehensive Review of Wide-Bandgap (WBG) Devices: SiC MOSFET and Its Failure Modes Affecting Reliability Physchem WBG devices SiC MOSFET overview failure modes |
| title | Comprehensive Review of Wide-Bandgap (WBG) Devices: SiC MOSFET and Its Failure Modes Affecting Reliability |
| title_full | Comprehensive Review of Wide-Bandgap (WBG) Devices: SiC MOSFET and Its Failure Modes Affecting Reliability |
| title_fullStr | Comprehensive Review of Wide-Bandgap (WBG) Devices: SiC MOSFET and Its Failure Modes Affecting Reliability |
| title_full_unstemmed | Comprehensive Review of Wide-Bandgap (WBG) Devices: SiC MOSFET and Its Failure Modes Affecting Reliability |
| title_short | Comprehensive Review of Wide-Bandgap (WBG) Devices: SiC MOSFET and Its Failure Modes Affecting Reliability |
| title_sort | comprehensive review of wide bandgap wbg devices sic mosfet and its failure modes affecting reliability |
| topic | WBG devices SiC MOSFET overview failure modes |
| url | https://www.mdpi.com/2673-7167/5/1/10 |
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