Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure
Temperature dependence of the energy band diagram of AlGaN/GaN heterostructure was investigated by theoretical calculation and experiment. Through solving Schrodinger and Poisson equations self-consistently by using the Silvaco Atlas software, the energy band diagram with varying temperature was cal...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2018-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2018/1592689 |
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| _version_ | 1850109825270153216 |
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| author | Yanli Liu Dunjun Chen Kexiu Dong Hai Lu Rong Zhang Youdou Zheng Zhilin Zhu Guangfen Wei Zhonghai Lin |
| author_facet | Yanli Liu Dunjun Chen Kexiu Dong Hai Lu Rong Zhang Youdou Zheng Zhilin Zhu Guangfen Wei Zhonghai Lin |
| author_sort | Yanli Liu |
| collection | DOAJ |
| description | Temperature dependence of the energy band diagram of AlGaN/GaN heterostructure was investigated by theoretical calculation and experiment. Through solving Schrodinger and Poisson equations self-consistently by using the Silvaco Atlas software, the energy band diagram with varying temperature was calculated. The results indicate that the conduction band offset of AlGaN/GaN heterostructure decreases with increasing temperature in the range of 7 K to 200 K, which means that the depth of quantum well at AlGaN/GaN interface becomes shallower and the confinement of that on two-dimensional electron gas reduces. The theoretical calculation results are verified by the investigation of temperature dependent photoluminescence of AlGaN/GaN heterostructure. This work provides important theoretical and experimental basis for the performance degradation of AlGaN/GaN HEMT with increasing temperature. |
| format | Article |
| id | doaj-art-43128c77792a4fc88adf4d7d2f1e8698 |
| institution | OA Journals |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2018-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-43128c77792a4fc88adf4d7d2f1e86982025-08-20T02:37:58ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242018-01-01201810.1155/2018/15926891592689Temperature Dependence of the Energy Band Diagram of AlGaN/GaN HeterostructureYanli Liu0Dunjun Chen1Kexiu Dong2Hai Lu3Rong Zhang4Youdou Zheng5Zhilin Zhu6Guangfen Wei7Zhonghai Lin8Key Laboratory of Intelligent Information Processing in Universities of Shandong, School of Information and Electronic Engineering, Shandong Technology and Business University, Yantai 264005, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaSchool of Electronic and Electrical Engineering, Chuzhou University, Chuzhou 239000, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, ChinaKey Laboratory of Intelligent Information Processing in Universities of Shandong, School of Information and Electronic Engineering, Shandong Technology and Business University, Yantai 264005, ChinaKey Laboratory of Intelligent Information Processing in Universities of Shandong, School of Information and Electronic Engineering, Shandong Technology and Business University, Yantai 264005, ChinaKey Laboratory of Intelligent Information Processing in Universities of Shandong, School of Information and Electronic Engineering, Shandong Technology and Business University, Yantai 264005, ChinaTemperature dependence of the energy band diagram of AlGaN/GaN heterostructure was investigated by theoretical calculation and experiment. Through solving Schrodinger and Poisson equations self-consistently by using the Silvaco Atlas software, the energy band diagram with varying temperature was calculated. The results indicate that the conduction band offset of AlGaN/GaN heterostructure decreases with increasing temperature in the range of 7 K to 200 K, which means that the depth of quantum well at AlGaN/GaN interface becomes shallower and the confinement of that on two-dimensional electron gas reduces. The theoretical calculation results are verified by the investigation of temperature dependent photoluminescence of AlGaN/GaN heterostructure. This work provides important theoretical and experimental basis for the performance degradation of AlGaN/GaN HEMT with increasing temperature.http://dx.doi.org/10.1155/2018/1592689 |
| spellingShingle | Yanli Liu Dunjun Chen Kexiu Dong Hai Lu Rong Zhang Youdou Zheng Zhilin Zhu Guangfen Wei Zhonghai Lin Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure Advances in Condensed Matter Physics |
| title | Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure |
| title_full | Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure |
| title_fullStr | Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure |
| title_full_unstemmed | Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure |
| title_short | Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure |
| title_sort | temperature dependence of the energy band diagram of algan gan heterostructure |
| url | http://dx.doi.org/10.1155/2018/1592689 |
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