Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure
Temperature dependence of the energy band diagram of AlGaN/GaN heterostructure was investigated by theoretical calculation and experiment. Through solving Schrodinger and Poisson equations self-consistently by using the Silvaco Atlas software, the energy band diagram with varying temperature was cal...
Saved in:
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2018-01-01
|
| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2018/1592689 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | Temperature dependence of the energy band diagram of AlGaN/GaN heterostructure was investigated by theoretical calculation and experiment. Through solving Schrodinger and Poisson equations self-consistently by using the Silvaco Atlas software, the energy band diagram with varying temperature was calculated. The results indicate that the conduction band offset of AlGaN/GaN heterostructure decreases with increasing temperature in the range of 7 K to 200 K, which means that the depth of quantum well at AlGaN/GaN interface becomes shallower and the confinement of that on two-dimensional electron gas reduces. The theoretical calculation results are verified by the investigation of temperature dependent photoluminescence of AlGaN/GaN heterostructure. This work provides important theoretical and experimental basis for the performance degradation of AlGaN/GaN HEMT with increasing temperature. |
|---|---|
| ISSN: | 1687-8108 1687-8124 |