Vapour-Phase and Solid-Phase Epitaxy of Silicon on Solid-Phase Crystallised Seed Layers for Solar Cells Application
Vapour-phase and solid-phase epitaxy are used for thickening of a solid-phase crystallised silicon seed layer on glass. Cross-sectional transmission microscope images confirm that a transfer of crystallographic information has taken place from the seed layer into the epilayers. X-ray diffraction, sc...
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2014/234602 |
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| author | Wei Li Sergey Varlamov Miga Jung Jialiang Huang |
| author_facet | Wei Li Sergey Varlamov Miga Jung Jialiang Huang |
| author_sort | Wei Li |
| collection | DOAJ |
| description | Vapour-phase and solid-phase epitaxy are used for thickening of a solid-phase
crystallised silicon seed layer on glass. Cross-sectional transmission microscope
images confirm that a transfer of crystallographic information has taken place
from the seed layer into the epilayers. X-ray diffraction, scanning electron microscopy,
and transmission electron microscopy reveal that the density of planar
defects (mainly on {111} plains) in the vapour-phase epitaxial sample is much
higher than in the solid-phase epitaxial sample. These planar defects can act as
recombination centres for free-charge carriers. Consequently, PC1D modelled minority
carrier diffusion length in the vapour-phase grown epilayer is 50% shorter
than that in the solid-phase grown epilayer. As a result, a solar cell grown by
solid-phase epitaxy achieves open circuit voltage of 468 mV, short circuit current
of 9.17 mA/cm2, and photovoltaic conversion efficiency at 2.75% which are all
higher than those of the solar cell grown by vapour-phase epitaxy on the same
seed layer, 400 mV, 7.28 mA/cm2, 1.69%, respectively. It proves that solid-phase epitaxy is more suitable for the solar cell growth on the solid-phase crystallised
silicon seed layer than vapour-phase epitaxy. |
| format | Article |
| id | doaj-art-42e0eb1c62d64e4a945ac8a8067d7375 |
| institution | DOAJ |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-42e0eb1c62d64e4a945ac8a8067d73752025-08-20T02:39:18ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2014-01-01201410.1155/2014/234602234602Vapour-Phase and Solid-Phase Epitaxy of Silicon on Solid-Phase Crystallised Seed Layers for Solar Cells ApplicationWei Li0Sergey Varlamov1Miga Jung2Jialiang Huang3School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052, AustraliaSchool of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052, AustraliaSchool of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052, AustraliaSchool of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052, AustraliaVapour-phase and solid-phase epitaxy are used for thickening of a solid-phase crystallised silicon seed layer on glass. Cross-sectional transmission microscope images confirm that a transfer of crystallographic information has taken place from the seed layer into the epilayers. X-ray diffraction, scanning electron microscopy, and transmission electron microscopy reveal that the density of planar defects (mainly on {111} plains) in the vapour-phase epitaxial sample is much higher than in the solid-phase epitaxial sample. These planar defects can act as recombination centres for free-charge carriers. Consequently, PC1D modelled minority carrier diffusion length in the vapour-phase grown epilayer is 50% shorter than that in the solid-phase grown epilayer. As a result, a solar cell grown by solid-phase epitaxy achieves open circuit voltage of 468 mV, short circuit current of 9.17 mA/cm2, and photovoltaic conversion efficiency at 2.75% which are all higher than those of the solar cell grown by vapour-phase epitaxy on the same seed layer, 400 mV, 7.28 mA/cm2, 1.69%, respectively. It proves that solid-phase epitaxy is more suitable for the solar cell growth on the solid-phase crystallised silicon seed layer than vapour-phase epitaxy.http://dx.doi.org/10.1155/2014/234602 |
| spellingShingle | Wei Li Sergey Varlamov Miga Jung Jialiang Huang Vapour-Phase and Solid-Phase Epitaxy of Silicon on Solid-Phase Crystallised Seed Layers for Solar Cells Application International Journal of Photoenergy |
| title | Vapour-Phase and Solid-Phase Epitaxy of Silicon on Solid-Phase Crystallised Seed Layers for Solar Cells Application |
| title_full | Vapour-Phase and Solid-Phase Epitaxy of Silicon on Solid-Phase Crystallised Seed Layers for Solar Cells Application |
| title_fullStr | Vapour-Phase and Solid-Phase Epitaxy of Silicon on Solid-Phase Crystallised Seed Layers for Solar Cells Application |
| title_full_unstemmed | Vapour-Phase and Solid-Phase Epitaxy of Silicon on Solid-Phase Crystallised Seed Layers for Solar Cells Application |
| title_short | Vapour-Phase and Solid-Phase Epitaxy of Silicon on Solid-Phase Crystallised Seed Layers for Solar Cells Application |
| title_sort | vapour phase and solid phase epitaxy of silicon on solid phase crystallised seed layers for solar cells application |
| url | http://dx.doi.org/10.1155/2014/234602 |
| work_keys_str_mv | AT weili vapourphaseandsolidphaseepitaxyofsilicononsolidphasecrystallisedseedlayersforsolarcellsapplication AT sergeyvarlamov vapourphaseandsolidphaseepitaxyofsilicononsolidphasecrystallisedseedlayersforsolarcellsapplication AT migajung vapourphaseandsolidphaseepitaxyofsilicononsolidphasecrystallisedseedlayersforsolarcellsapplication AT jialianghuang vapourphaseandsolidphaseepitaxyofsilicononsolidphasecrystallisedseedlayersforsolarcellsapplication |