Vapour-Phase and Solid-Phase Epitaxy of Silicon on Solid-Phase Crystallised Seed Layers for Solar Cells Application
Vapour-phase and solid-phase epitaxy are used for thickening of a solid-phase crystallised silicon seed layer on glass. Cross-sectional transmission microscope images confirm that a transfer of crystallographic information has taken place from the seed layer into the epilayers. X-ray diffraction, sc...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2014-01-01
|
| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2014/234602 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | Vapour-phase and solid-phase epitaxy are used for thickening of a solid-phase
crystallised silicon seed layer on glass. Cross-sectional transmission microscope
images confirm that a transfer of crystallographic information has taken place
from the seed layer into the epilayers. X-ray diffraction, scanning electron microscopy,
and transmission electron microscopy reveal that the density of planar
defects (mainly on {111} plains) in the vapour-phase epitaxial sample is much
higher than in the solid-phase epitaxial sample. These planar defects can act as
recombination centres for free-charge carriers. Consequently, PC1D modelled minority
carrier diffusion length in the vapour-phase grown epilayer is 50% shorter
than that in the solid-phase grown epilayer. As a result, a solar cell grown by
solid-phase epitaxy achieves open circuit voltage of 468 mV, short circuit current
of 9.17 mA/cm2, and photovoltaic conversion efficiency at 2.75% which are all
higher than those of the solar cell grown by vapour-phase epitaxy on the same
seed layer, 400 mV, 7.28 mA/cm2, 1.69%, respectively. It proves that solid-phase epitaxy is more suitable for the solar cell growth on the solid-phase crystallised
silicon seed layer than vapour-phase epitaxy. |
|---|---|
| ISSN: | 1110-662X 1687-529X |