Strain-free thin film growth of vanadium dioxide deposited on 2D atomic layered material of hexagonal boron nitride investigated by their thickness dependence of insulator–metal transition behavior
We report on the preparation of vanadium dioxide (VO _2 ) ultrathin films on hexagonal boron nitride (hBN), which is a typical two-dimensional material, to show clear metal–insulator transition owing to weak van der Waals interaction at their surface. It is confirmed that VO _2 films on hBN with thi...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | Applied Physics Express |
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| Online Access: | https://doi.org/10.35848/1882-0786/adaf09 |
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| author | Boyuan Yu Shingo Genchi Kenji Watanabe Takashi Taniguchi Hidekazu Tanaka |
| author_facet | Boyuan Yu Shingo Genchi Kenji Watanabe Takashi Taniguchi Hidekazu Tanaka |
| author_sort | Boyuan Yu |
| collection | DOAJ |
| description | We report on the preparation of vanadium dioxide (VO _2 ) ultrathin films on hexagonal boron nitride (hBN), which is a typical two-dimensional material, to show clear metal–insulator transition owing to weak van der Waals interaction at their surface. It is confirmed that VO _2 films on hBN with thicknesses ranging from 10 to 40 nm exhibit bulk like metal–insulator transition without degradation using Raman scattering spectroscopy and electric transport measurements. These results demonstrate the importance of the 2D material nature of hBN for producing strain-free oxide thin films. |
| format | Article |
| id | doaj-art-424960d8ccf84f78b43dca9e2bee658e |
| institution | Kabale University |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-424960d8ccf84f78b43dca9e2bee658e2025-02-10T14:47:38ZengIOP PublishingApplied Physics Express1882-07862025-01-0118202550210.35848/1882-0786/adaf09Strain-free thin film growth of vanadium dioxide deposited on 2D atomic layered material of hexagonal boron nitride investigated by their thickness dependence of insulator–metal transition behaviorBoyuan Yu0Shingo Genchi1https://orcid.org/0000-0001-5458-2825Kenji Watanabe2https://orcid.org/0000-0003-3701-8119Takashi Taniguchi3Hidekazu Tanaka4SANKEN (Institute of Scientific and Industrial Research), Osaka University , 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, JapanSANKEN (Institute of Scientific and Industrial Research), Osaka University , 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, JapanResearch Center for Electronic and Optical Materials, National Institute for Materials Science , 1-1 Namiki, Tsukuba 305-0044, JapanResearch Center for Materials Nanoarchitectonics, National Institute for Materials Science , 1-1 Namiki, Tsukuba 305-0044, JapanSANKEN (Institute of Scientific and Industrial Research), Osaka University , 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan; Spintronics Research Network Division, Institute for Open and Transdisciplinary Research Initiatives (OTRI), Osaka University , JapanWe report on the preparation of vanadium dioxide (VO _2 ) ultrathin films on hexagonal boron nitride (hBN), which is a typical two-dimensional material, to show clear metal–insulator transition owing to weak van der Waals interaction at their surface. It is confirmed that VO _2 films on hBN with thicknesses ranging from 10 to 40 nm exhibit bulk like metal–insulator transition without degradation using Raman scattering spectroscopy and electric transport measurements. These results demonstrate the importance of the 2D material nature of hBN for producing strain-free oxide thin films.https://doi.org/10.35848/1882-0786/adaf09VO2hBNinsulator-metal transitionstrain free heterostructure |
| spellingShingle | Boyuan Yu Shingo Genchi Kenji Watanabe Takashi Taniguchi Hidekazu Tanaka Strain-free thin film growth of vanadium dioxide deposited on 2D atomic layered material of hexagonal boron nitride investigated by their thickness dependence of insulator–metal transition behavior Applied Physics Express VO2 hBN insulator-metal transition strain free heterostructure |
| title | Strain-free thin film growth of vanadium dioxide deposited on 2D atomic layered material of hexagonal boron nitride investigated by their thickness dependence of insulator–metal transition behavior |
| title_full | Strain-free thin film growth of vanadium dioxide deposited on 2D atomic layered material of hexagonal boron nitride investigated by their thickness dependence of insulator–metal transition behavior |
| title_fullStr | Strain-free thin film growth of vanadium dioxide deposited on 2D atomic layered material of hexagonal boron nitride investigated by their thickness dependence of insulator–metal transition behavior |
| title_full_unstemmed | Strain-free thin film growth of vanadium dioxide deposited on 2D atomic layered material of hexagonal boron nitride investigated by their thickness dependence of insulator–metal transition behavior |
| title_short | Strain-free thin film growth of vanadium dioxide deposited on 2D atomic layered material of hexagonal boron nitride investigated by their thickness dependence of insulator–metal transition behavior |
| title_sort | strain free thin film growth of vanadium dioxide deposited on 2d atomic layered material of hexagonal boron nitride investigated by their thickness dependence of insulator metal transition behavior |
| topic | VO2 hBN insulator-metal transition strain free heterostructure |
| url | https://doi.org/10.35848/1882-0786/adaf09 |
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