Enhancing the density of silicon carbide with the addition of nitrate-based additives
Dense monolithic silicon carbide (SiC) was successfully sintered by hot pressing at 1750ºC for 1 h under an applied pressure of 20 MPa with the addition of a nitrate-based additive. With the addition of MgO-Y2O3 and Al2O3-Y2O3 in nitrate form, a relative density of more than 98% was achieved, while...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
University of Belgrade, Technical Faculty, Bor
2022-01-01
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| Series: | Journal of Mining and Metallurgy. Section B: Metallurgy |
| Subjects: | |
| Online Access: | http://www.doiserbia.nb.rs/img/doi/1450-5339/2022/1450-53392200020D.pdf |
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| Summary: | Dense monolithic silicon carbide (SiC) was successfully sintered by hot pressing at 1750ºC for 1 h under an applied pressure of 20 MPa with the addition of a nitrate-based additive. With the addition of MgO-Y2O3 and Al2O3-Y2O3 in nitrate form, a relative density of more than 98% was achieved, while in the oxide form it was 85.0 and 96.0%, respectively. In fact, MgO-Y2O3 showed poor densification due to the eutectic temperature of 2110ºC, however, the addition of the nitrate form of MgO-Y2O3 greatly enhanced the densification. The sintering mechanism in the nitrate-based additive is liquid phase sintering, identified by the presence of an oxide phase, i.e., Y2O3 in the SiC with the addition of Al2O3-Y2O3 in nitrate form. Moreover, the addition of nitrate form suppressed the grain growth of SiC, which was believed to be due to the adequate rearrangement stage during sintering. |
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| ISSN: | 1450-5339 2217-7175 |