MOCVD Grown InGaAs/InAlAs Quantum Cascade Lasers Emitting at 7.7 μm
In this paper, we report the growth of high-quality <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><msub><mi>In</mi><mrow><mn>0.59</mn></mrow></msub><msu...
Saved in:
| Main Authors: | Maciej Bugajski, Andrzej Kolek, Grzegorz Hałdaś, Włodzimierz Strupiński, Iwona Pasternak, Walery Kołkowski, Kamil Pierściński |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-12-01
|
| Series: | Photonics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2304-6732/11/12/1195 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
THE EFFECT OF ELASTIC STRESS ON THE PROCESS OF OBTAINING InGaAs/AlGaAs QUANTUM WELL BY MOCVD
by: Т. А. Bagaev, et al.
Published: (2013-08-01) -
High-Speed and Broadband InGaAs/InP Photodiode with InGaAsP Graded Bandgap Layers
by: Guohao Yang, et al.
Published: (2025-04-01) -
A comparative study of InGaAs/InAsSb and InAs/InAsSb strained layer superlattices
by: H. X. Yin, et al.
Published: (2025-07-01) -
Numerical Analysis of AlGaAs/InGaAs/GaAs pHEMT
by: A. V. Sapozhnikov, et al.
Published: (2025-07-01) -
830-nm InGaAs Quantum Well Lasers With Very Low Beam Divergence
by: Bocang Qiu, et al.
Published: (2017-01-01)