Silicon Micromachining for High Performance Passive Structures at W Band

This paper presents a micromachined technology allowing the realization of very high aspect ratio millimeter-wave circuits. Appropriate 3D electromagnetic simulations based on the finite element method have been implemented to design the circuits. Coplanar transmission lines featuring loss level in...

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Main Authors: B. Guillon, K. Grenier, T. Parra, P. Pons, D. Cros, P. Blondy, J. Graffeuil, J. L. Cazaux, R. Plana
Format: Article
Language:English
Published: Wiley 2002-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1080/08827510211278
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author B. Guillon
K. Grenier
T. Parra
P. Pons
D. Cros
P. Blondy
J. Graffeuil
J. L. Cazaux
R. Plana
author_facet B. Guillon
K. Grenier
T. Parra
P. Pons
D. Cros
P. Blondy
J. Graffeuil
J. L. Cazaux
R. Plana
author_sort B. Guillon
collection DOAJ
description This paper presents a micromachined technology allowing the realization of very high aspect ratio millimeter-wave circuits. Appropriate 3D electromagnetic simulations based on the finite element method have been implemented to design the circuits. Coplanar transmission lines featuring loss level in the 2 dB range up to 105 GHz have been realized. An original silicon micromachined cavity using the whispering gallery modes properties has been realized achieving a quality factor close to 10,000 range at 95 GHz.
format Article
id doaj-art-418ef5b9e24f423a9d55c707bb76dc4b
institution OA Journals
issn 0882-7516
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language English
publishDate 2002-01-01
publisher Wiley
record_format Article
series Active and Passive Electronic Components
spelling doaj-art-418ef5b9e24f423a9d55c707bb76dc4b2025-08-20T02:08:26ZengWileyActive and Passive Electronic Components0882-75161563-50312002-01-0125111312210.1080/08827510211278Silicon Micromachining for High Performance Passive Structures at W BandB. Guillon0K. Grenier1T. Parra2P. Pons3D. Cros4P. Blondy5J. Graffeuil6J. L. Cazaux7R. Plana8LAAS-CNRS, 7 Av du Colonel Roche, Toulouse Cedex04 31077, FranceLAAS-CNRS, 7 Av du Colonel Roche, Toulouse Cedex04 31077, FranceLAAS-CNRS, 7 Av du Colonel Roche, Toulouse Cedex04 31077, FranceLAAS-CNRS, 7 Av du Colonel Roche, Toulouse Cedex04 31077, FranceIRCOM, 123 Av Albert Thomas, Limoges Cedex 87000, FranceIRCOM, 123 Av Albert Thomas, Limoges Cedex 87000, FranceLAAS-CNRS, 7 Av du Colonel Roche, Toulouse Cedex04 31077, FranceAlcatel Space Industry, 26 Av J.F. Champollion, Toulouse 31037, FranceLAAS-CNRS, 7 Av du Colonel Roche, Toulouse Cedex04 31077, FranceThis paper presents a micromachined technology allowing the realization of very high aspect ratio millimeter-wave circuits. Appropriate 3D electromagnetic simulations based on the finite element method have been implemented to design the circuits. Coplanar transmission lines featuring loss level in the 2 dB range up to 105 GHz have been realized. An original silicon micromachined cavity using the whispering gallery modes properties has been realized achieving a quality factor close to 10,000 range at 95 GHz.http://dx.doi.org/10.1080/08827510211278
spellingShingle B. Guillon
K. Grenier
T. Parra
P. Pons
D. Cros
P. Blondy
J. Graffeuil
J. L. Cazaux
R. Plana
Silicon Micromachining for High Performance Passive Structures at W Band
Active and Passive Electronic Components
title Silicon Micromachining for High Performance Passive Structures at W Band
title_full Silicon Micromachining for High Performance Passive Structures at W Band
title_fullStr Silicon Micromachining for High Performance Passive Structures at W Band
title_full_unstemmed Silicon Micromachining for High Performance Passive Structures at W Band
title_short Silicon Micromachining for High Performance Passive Structures at W Band
title_sort silicon micromachining for high performance passive structures at w band
url http://dx.doi.org/10.1080/08827510211278
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