Unveiling an in-plane Hall effect in rutile RuO2 films
Abstract The in-plane-magnetic-field-induced Hall effect (IPHE) observed in Weyl semimetals and PT-symmetric antiferromagnets has attracted increasing attention, as it breaks the stereotype that the Hall effect is induced by an out-of-plane magnetic field or magnetization. To date, the IPHE has been...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2025-01-01
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| Series: | Communications Physics |
| Online Access: | https://doi.org/10.1038/s42005-025-01943-3 |
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| author | Meng Wang Jianbing Zhang Di Tian Pu Yu Fumitaka Kagawa |
| author_facet | Meng Wang Jianbing Zhang Di Tian Pu Yu Fumitaka Kagawa |
| author_sort | Meng Wang |
| collection | DOAJ |
| description | Abstract The in-plane-magnetic-field-induced Hall effect (IPHE) observed in Weyl semimetals and PT-symmetric antiferromagnets has attracted increasing attention, as it breaks the stereotype that the Hall effect is induced by an out-of-plane magnetic field or magnetization. To date, the IPHE has been discussed mainly for materials with low-symmetry crystal/magnetic point groups. Here, we show that even if symmetry forbids an inherent IPHE that arises from any mechanism, an apparent IPHE can be generated by selecting a low-symmetry crystalline plane for measurement. For rutile RuO2, although its high symmetry forbids an inherent IPHE, films grown along the low-symmetry (1 1 1) and (1 0 1) orientations are found to exhibit a distinct IPHE. The in-plane Hall coefficients are quantitatively reproduced by referring to the out-of-plane Hall coefficients measured for the high-symmetry (1 0 0) and (0 0 1) planes, indicating that the observed IPHE is caused by a superposition of inequivalent out-of-plane Hall effects. Similar behaviour is also observed for paramagnetic rutile systems, indicating the ubiquity of the apparent IPHE in electronic and spintronic devices with low-symmetry crystalline planes. |
| format | Article |
| id | doaj-art-4180cd0c87c144498cafc2dd3b5628a7 |
| institution | Kabale University |
| issn | 2399-3650 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Communications Physics |
| spelling | doaj-art-4180cd0c87c144498cafc2dd3b5628a72025-01-19T12:26:26ZengNature PortfolioCommunications Physics2399-36502025-01-01811710.1038/s42005-025-01943-3Unveiling an in-plane Hall effect in rutile RuO2 filmsMeng Wang0Jianbing Zhang1Di Tian2Pu Yu3Fumitaka Kagawa4RIKEN Center for Emergent Matter Science (CEMS)State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua UniversityState Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua UniversityState Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua UniversityRIKEN Center for Emergent Matter Science (CEMS)Abstract The in-plane-magnetic-field-induced Hall effect (IPHE) observed in Weyl semimetals and PT-symmetric antiferromagnets has attracted increasing attention, as it breaks the stereotype that the Hall effect is induced by an out-of-plane magnetic field or magnetization. To date, the IPHE has been discussed mainly for materials with low-symmetry crystal/magnetic point groups. Here, we show that even if symmetry forbids an inherent IPHE that arises from any mechanism, an apparent IPHE can be generated by selecting a low-symmetry crystalline plane for measurement. For rutile RuO2, although its high symmetry forbids an inherent IPHE, films grown along the low-symmetry (1 1 1) and (1 0 1) orientations are found to exhibit a distinct IPHE. The in-plane Hall coefficients are quantitatively reproduced by referring to the out-of-plane Hall coefficients measured for the high-symmetry (1 0 0) and (0 0 1) planes, indicating that the observed IPHE is caused by a superposition of inequivalent out-of-plane Hall effects. Similar behaviour is also observed for paramagnetic rutile systems, indicating the ubiquity of the apparent IPHE in electronic and spintronic devices with low-symmetry crystalline planes.https://doi.org/10.1038/s42005-025-01943-3 |
| spellingShingle | Meng Wang Jianbing Zhang Di Tian Pu Yu Fumitaka Kagawa Unveiling an in-plane Hall effect in rutile RuO2 films Communications Physics |
| title | Unveiling an in-plane Hall effect in rutile RuO2 films |
| title_full | Unveiling an in-plane Hall effect in rutile RuO2 films |
| title_fullStr | Unveiling an in-plane Hall effect in rutile RuO2 films |
| title_full_unstemmed | Unveiling an in-plane Hall effect in rutile RuO2 films |
| title_short | Unveiling an in-plane Hall effect in rutile RuO2 films |
| title_sort | unveiling an in plane hall effect in rutile ruo2 films |
| url | https://doi.org/10.1038/s42005-025-01943-3 |
| work_keys_str_mv | AT mengwang unveilinganinplanehalleffectinrutileruo2films AT jianbingzhang unveilinganinplanehalleffectinrutileruo2films AT ditian unveilinganinplanehalleffectinrutileruo2films AT puyu unveilinganinplanehalleffectinrutileruo2films AT fumitakakagawa unveilinganinplanehalleffectinrutileruo2films |