Studying the Properties of RF-Sputtered Nanocrystalline Tin-Doped Indium Oxide
The ceramic target of Indium tinoxide (ITO) (90% In2O3-10%SnO2) has been used to prepare transparent semiconductive thin films on glass substrate by RF magnetron sputtering at room temperature. The properties of the thin films are affected by controlling the deposition parameters, namely, RF power v...
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| Format: | Article |
| Language: | English |
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Wiley
2011-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2011/139374 |
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| author | Abd El-Hady B. Kashyout Marwa Fathy Moataz B. Soliman |
| author_facet | Abd El-Hady B. Kashyout Marwa Fathy Moataz B. Soliman |
| author_sort | Abd El-Hady B. Kashyout |
| collection | DOAJ |
| description | The ceramic target of Indium tinoxide (ITO) (90% In2O3-10%SnO2) has been used to prepare transparent semiconductive thin films on glass substrate by RF magnetron sputtering at room temperature. The properties of the thin films are affected by controlling the deposition parameters, namely, RF power values and deposition times. The structure, morphology, optical and electrical properties of the thin films are investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), atomic force microscope (AFM), UV-Vis spectrophotometer, and four-point probe measurement. Nanoparticles of 10–20 nm are measured and confirmed using both FESEM and AFM. The main preferred orientations of the prepared thin films are (222) and (400) of the cubic ITO structure. The transparent semiconductive films have high transmittance within the visible range of values 80–90% and resistivity of about 1.62×10−4 Ω⋅cm. |
| format | Article |
| id | doaj-art-413329ae19254c3ebd15dd34ae1ab1aa |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2011-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-413329ae19254c3ebd15dd34ae1ab1aa2025-02-03T01:32:14ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2011-01-01201110.1155/2011/139374139374Studying the Properties of RF-Sputtered Nanocrystalline Tin-Doped Indium OxideAbd El-Hady B. Kashyout0Marwa Fathy1Moataz B. Soliman2Advanced Technology and New Materials Research Institute, Mubarak City for Scientific Research and Technology Applications, New Borg El-Arab City, Alexandria 21934, EgyptAdvanced Technology and New Materials Research Institute, Mubarak City for Scientific Research and Technology Applications, New Borg El-Arab City, Alexandria 21934, EgyptInstitute of Graduate Studies and Research, Alexandria University, 163 Horrya Avenue, P.O. Box 832, Shatby, Alexandria 21526, EgyptThe ceramic target of Indium tinoxide (ITO) (90% In2O3-10%SnO2) has been used to prepare transparent semiconductive thin films on glass substrate by RF magnetron sputtering at room temperature. The properties of the thin films are affected by controlling the deposition parameters, namely, RF power values and deposition times. The structure, morphology, optical and electrical properties of the thin films are investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), atomic force microscope (AFM), UV-Vis spectrophotometer, and four-point probe measurement. Nanoparticles of 10–20 nm are measured and confirmed using both FESEM and AFM. The main preferred orientations of the prepared thin films are (222) and (400) of the cubic ITO structure. The transparent semiconductive films have high transmittance within the visible range of values 80–90% and resistivity of about 1.62×10−4 Ω⋅cm.http://dx.doi.org/10.1155/2011/139374 |
| spellingShingle | Abd El-Hady B. Kashyout Marwa Fathy Moataz B. Soliman Studying the Properties of RF-Sputtered Nanocrystalline Tin-Doped Indium Oxide International Journal of Photoenergy |
| title | Studying the Properties of RF-Sputtered Nanocrystalline Tin-Doped Indium Oxide |
| title_full | Studying the Properties of RF-Sputtered Nanocrystalline Tin-Doped Indium Oxide |
| title_fullStr | Studying the Properties of RF-Sputtered Nanocrystalline Tin-Doped Indium Oxide |
| title_full_unstemmed | Studying the Properties of RF-Sputtered Nanocrystalline Tin-Doped Indium Oxide |
| title_short | Studying the Properties of RF-Sputtered Nanocrystalline Tin-Doped Indium Oxide |
| title_sort | studying the properties of rf sputtered nanocrystalline tin doped indium oxide |
| url | http://dx.doi.org/10.1155/2011/139374 |
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