A Readout Scheme for PCM-Based Analog In-Memory Computing With Drift Compensation Through Reference Conductance Tracking
This article presents a readout scheme for analog in-memory computing (AIMC) based on an embedded phase-change memory (ePCM). Conductance time drift is overcome with a hardware compensation technique based on a reference cell conductance tracking (RCCT). Accuracy drop due to circuits mismatch and va...
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Open Journal of the Solid-State Circuits Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10609348/ |
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| author | Alessio Antolini Andrea Lico Francesco Zavalloni Eleonora Franchi Scarselli Antonio Gnudi Mattia Luigi Torres Roberto Canegallo Marco Pasotti |
| author_facet | Alessio Antolini Andrea Lico Francesco Zavalloni Eleonora Franchi Scarselli Antonio Gnudi Mattia Luigi Torres Roberto Canegallo Marco Pasotti |
| author_sort | Alessio Antolini |
| collection | DOAJ |
| description | This article presents a readout scheme for analog in-memory computing (AIMC) based on an embedded phase-change memory (ePCM). Conductance time drift is overcome with a hardware compensation technique based on a reference cell conductance tracking (RCCT). Accuracy drop due to circuits mismatch and variability involved in the computational chain are minimized with an optimized iterative program-and-verify algorithm applied to the phase-change memory (PCM) devices. The proposed AIMC scheme is designed and manufactured in a 90-nm STMicroelectronics CMOS technology, with the aim of adding a signed multiply-and-accumulate (MAC) computation feature to a Ge-Rich GeSbTe (GST) embedded PCM array. Experimental characterizations are performed under different operating conditions and show that the mean MAC decrease in time is approximately null at room temperature and reduced by a factor of 3 after 64-h bake at <inline-formula> <tex-math notation="LaTeX">$85~{^{\circ }}$ </tex-math></inline-formula>C. Based on several MAC operations, the estimated <inline-formula> <tex-math notation="LaTeX">$512\times 512$ </tex-math></inline-formula> matrix-vector-multiplication (MVM) accuracy is 97.4%, whose decrease in time is less than 3% in the worst case. |
| format | Article |
| id | doaj-art-410dac993f694d3ba1f6f8a8600151c0 |
| institution | Kabale University |
| issn | 2644-1349 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Open Journal of the Solid-State Circuits Society |
| spelling | doaj-art-410dac993f694d3ba1f6f8a8600151c02025-01-25T00:03:02ZengIEEEIEEE Open Journal of the Solid-State Circuits Society2644-13492024-01-014698210.1109/OJSSCS.2024.343246810609348A Readout Scheme for PCM-Based Analog In-Memory Computing With Drift Compensation Through Reference Conductance TrackingAlessio Antolini0https://orcid.org/0000-0003-0952-3839Andrea Lico1https://orcid.org/0000-0001-5267-2421Francesco Zavalloni2https://orcid.org/0000-0003-0103-8126Eleonora Franchi Scarselli3https://orcid.org/0000-0001-6994-2088Antonio Gnudi4https://orcid.org/0000-0002-2186-3468Mattia Luigi Torres5Roberto Canegallo6https://orcid.org/0000-0002-3381-0697Marco Pasotti7https://orcid.org/0000-0003-4988-9982ARCES-DEI, University of Bologna, Bologna, ItalyARCES-DEI, University of Bologna, Bologna, ItalyARCES-DEI, University of Bologna, Bologna, ItalyARCES-DEI, University of Bologna, Bologna, ItalyARCES-DEI, University of Bologna, Bologna, ItalySmart Power Technology R&D, STMicroelectronics, Agrate Brianza, ItalySmart Power Technology R&D, STMicroelectronics, Agrate Brianza, ItalySmart Power Technology R&D, STMicroelectronics, Agrate Brianza, ItalyThis article presents a readout scheme for analog in-memory computing (AIMC) based on an embedded phase-change memory (ePCM). Conductance time drift is overcome with a hardware compensation technique based on a reference cell conductance tracking (RCCT). Accuracy drop due to circuits mismatch and variability involved in the computational chain are minimized with an optimized iterative program-and-verify algorithm applied to the phase-change memory (PCM) devices. The proposed AIMC scheme is designed and manufactured in a 90-nm STMicroelectronics CMOS technology, with the aim of adding a signed multiply-and-accumulate (MAC) computation feature to a Ge-Rich GeSbTe (GST) embedded PCM array. Experimental characterizations are performed under different operating conditions and show that the mean MAC decrease in time is approximately null at room temperature and reduced by a factor of 3 after 64-h bake at <inline-formula> <tex-math notation="LaTeX">$85~{^{\circ }}$ </tex-math></inline-formula>C. Based on several MAC operations, the estimated <inline-formula> <tex-math notation="LaTeX">$512\times 512$ </tex-math></inline-formula> matrix-vector-multiplication (MVM) accuracy is 97.4%, whose decrease in time is less than 3% in the worst case.https://ieeexplore.ieee.org/document/10609348/Analog in-memory computing (AIMC)artificial intelligencedrift compensationmatrix-vector multiplication (MVM)phase-change memory (PCM) |
| spellingShingle | Alessio Antolini Andrea Lico Francesco Zavalloni Eleonora Franchi Scarselli Antonio Gnudi Mattia Luigi Torres Roberto Canegallo Marco Pasotti A Readout Scheme for PCM-Based Analog In-Memory Computing With Drift Compensation Through Reference Conductance Tracking IEEE Open Journal of the Solid-State Circuits Society Analog in-memory computing (AIMC) artificial intelligence drift compensation matrix-vector multiplication (MVM) phase-change memory (PCM) |
| title | A Readout Scheme for PCM-Based Analog In-Memory Computing With Drift Compensation Through Reference Conductance Tracking |
| title_full | A Readout Scheme for PCM-Based Analog In-Memory Computing With Drift Compensation Through Reference Conductance Tracking |
| title_fullStr | A Readout Scheme for PCM-Based Analog In-Memory Computing With Drift Compensation Through Reference Conductance Tracking |
| title_full_unstemmed | A Readout Scheme for PCM-Based Analog In-Memory Computing With Drift Compensation Through Reference Conductance Tracking |
| title_short | A Readout Scheme for PCM-Based Analog In-Memory Computing With Drift Compensation Through Reference Conductance Tracking |
| title_sort | readout scheme for pcm based analog in memory computing with drift compensation through reference conductance tracking |
| topic | Analog in-memory computing (AIMC) artificial intelligence drift compensation matrix-vector multiplication (MVM) phase-change memory (PCM) |
| url | https://ieeexplore.ieee.org/document/10609348/ |
| work_keys_str_mv | AT alessioantolini areadoutschemeforpcmbasedanaloginmemorycomputingwithdriftcompensationthroughreferenceconductancetracking AT andrealico areadoutschemeforpcmbasedanaloginmemorycomputingwithdriftcompensationthroughreferenceconductancetracking AT francescozavalloni areadoutschemeforpcmbasedanaloginmemorycomputingwithdriftcompensationthroughreferenceconductancetracking AT eleonorafranchiscarselli areadoutschemeforpcmbasedanaloginmemorycomputingwithdriftcompensationthroughreferenceconductancetracking AT antoniognudi areadoutschemeforpcmbasedanaloginmemorycomputingwithdriftcompensationthroughreferenceconductancetracking AT mattialuigitorres areadoutschemeforpcmbasedanaloginmemorycomputingwithdriftcompensationthroughreferenceconductancetracking AT robertocanegallo areadoutschemeforpcmbasedanaloginmemorycomputingwithdriftcompensationthroughreferenceconductancetracking AT marcopasotti areadoutschemeforpcmbasedanaloginmemorycomputingwithdriftcompensationthroughreferenceconductancetracking AT alessioantolini readoutschemeforpcmbasedanaloginmemorycomputingwithdriftcompensationthroughreferenceconductancetracking AT andrealico readoutschemeforpcmbasedanaloginmemorycomputingwithdriftcompensationthroughreferenceconductancetracking AT francescozavalloni readoutschemeforpcmbasedanaloginmemorycomputingwithdriftcompensationthroughreferenceconductancetracking AT eleonorafranchiscarselli readoutschemeforpcmbasedanaloginmemorycomputingwithdriftcompensationthroughreferenceconductancetracking AT antoniognudi readoutschemeforpcmbasedanaloginmemorycomputingwithdriftcompensationthroughreferenceconductancetracking AT mattialuigitorres readoutschemeforpcmbasedanaloginmemorycomputingwithdriftcompensationthroughreferenceconductancetracking AT robertocanegallo readoutschemeforpcmbasedanaloginmemorycomputingwithdriftcompensationthroughreferenceconductancetracking AT marcopasotti readoutschemeforpcmbasedanaloginmemorycomputingwithdriftcompensationthroughreferenceconductancetracking |