Flow Rate-Driven Morphology Evolution of Chemical Vapor Deposited WS<sub>2</sub> at Varying Temperatures

Due to its unique electronic and optical properties, tungsten disulfide (WS<sub>2</sub>) is a promising material for various device applications. However, achieving an efficient and cost-effective method for synthesizing large-area uniform WS<sub>2</sub> is still challenging....

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Bibliographic Details
Main Authors: Himal Pokhrel, Sanjay Mishra, Shawn Pollard
Format: Article
Language:English
Published: MDPI AG 2024-10-01
Series:Solids
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Online Access:https://www.mdpi.com/2673-6497/5/4/34
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Summary:Due to its unique electronic and optical properties, tungsten disulfide (WS<sub>2</sub>) is a promising material for various device applications. However, achieving an efficient and cost-effective method for synthesizing large-area uniform WS<sub>2</sub> is still challenging. In this work, we demonstrate the synthesis of few-layer WS<sub>2</sub> crystallites by NaCl-assisted low-pressure chemical vapor deposition and study the effect of temperature and the carrier gas flow rate on the morphology, structure, and optical properties of the as-grown WS<sub>2</sub> films. We observe transitions between regular triangular to strongly disordered structures with sizes up to 50 µm through temperature and carrier gas flow rate tuning. As-grown samples were characterized by Raman spectroscopy, scanning electron microscopy, and X-ray photoelectron spectroscopy. The result of this work provides a path toward the optimization of growth conditions for obtaining WS<sub>2</sub> with desired morphologies for various applications.
ISSN:2673-6497