Flow Rate-Driven Morphology Evolution of Chemical Vapor Deposited WS<sub>2</sub> at Varying Temperatures
Due to its unique electronic and optical properties, tungsten disulfide (WS<sub>2</sub>) is a promising material for various device applications. However, achieving an efficient and cost-effective method for synthesizing large-area uniform WS<sub>2</sub> is still challenging....
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-10-01
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| Series: | Solids |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2673-6497/5/4/34 |
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| Summary: | Due to its unique electronic and optical properties, tungsten disulfide (WS<sub>2</sub>) is a promising material for various device applications. However, achieving an efficient and cost-effective method for synthesizing large-area uniform WS<sub>2</sub> is still challenging. In this work, we demonstrate the synthesis of few-layer WS<sub>2</sub> crystallites by NaCl-assisted low-pressure chemical vapor deposition and study the effect of temperature and the carrier gas flow rate on the morphology, structure, and optical properties of the as-grown WS<sub>2</sub> films. We observe transitions between regular triangular to strongly disordered structures with sizes up to 50 µm through temperature and carrier gas flow rate tuning. As-grown samples were characterized by Raman spectroscopy, scanning electron microscopy, and X-ray photoelectron spectroscopy. The result of this work provides a path toward the optimization of growth conditions for obtaining WS<sub>2</sub> with desired morphologies for various applications. |
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| ISSN: | 2673-6497 |