Thermal stability of FeSi as barrier layer in high-performance Mg2Si0.3Sn0.7 thermoelectric device
Thermal stability of thermoelectric devices plays a pivotal role in their practical applications. Chemical reaction/diffusion between thermoelectric materials and electrodes is one of the primary factors contributing to the degradation/failure of device performance at elevated temperatures. Introduc...
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| Format: | Article |
| Language: | English |
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Elsevier
2025-09-01
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| Series: | Journal of Materiomics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352847825000346 |
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| author | Shanshan Hu Chen Huang Changyuan Li Long Yang Zhiwei Chen Baisheng Sa Wen Li Yanzhong Pei |
| author_facet | Shanshan Hu Chen Huang Changyuan Li Long Yang Zhiwei Chen Baisheng Sa Wen Li Yanzhong Pei |
| author_sort | Shanshan Hu |
| collection | DOAJ |
| description | Thermal stability of thermoelectric devices plays a pivotal role in their practical applications. Chemical reaction/diffusion between thermoelectric materials and electrodes is one of the primary factors contributing to the degradation/failure of device performance at elevated temperatures. Introducing barrier layers to impede the behavior of chemical reactions has emerged as an effective approach for averting the failure of these devices. In this work, the FeSi is revealed to be a potent material of barrier layer in high-performance Mg2Si0.3Sn0.7 thermoelectric material based on the considerations of interfacial reaction energy and sinterability. The well-established bond in Mg2Si0.3Sn0.7/FeSi joint results in a low contact resistivity of ∼20 μΩ⸱cm2 and a conversion efficient of ∼6.5% for the Mg2Si0.3Sn0.7 single-leg device is achieved at a temperature difference of ∼290 K. Long-term measurements of the device at a hot-side temperature of 600 K reveal that the performance remains nearly invariable as time further increases, which suggests that the FeSi layer retards the chemical reaction/diffusion. |
| format | Article |
| id | doaj-art-40c88d3cccd54631aeb694fb8e5c7bfa |
| institution | Kabale University |
| issn | 2352-8478 |
| language | English |
| publishDate | 2025-09-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materiomics |
| spelling | doaj-art-40c88d3cccd54631aeb694fb8e5c7bfa2025-08-20T03:32:50ZengElsevierJournal of Materiomics2352-84782025-09-0111510104410.1016/j.jmat.2025.101044Thermal stability of FeSi as barrier layer in high-performance Mg2Si0.3Sn0.7 thermoelectric deviceShanshan Hu0Chen Huang1Changyuan Li2Long Yang3Zhiwei Chen4Baisheng Sa5Wen Li6Yanzhong Pei7Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, 4800 Caoan Road, Shanghai, 201804, ChinaCollege of Materials Science and Engineering, Fuzhou University, 2 North Wulongjiang Road, Fuzhou, 350108, ChinaInterdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, 4800 Caoan Road, Shanghai, 201804, ChinaInterdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, 4800 Caoan Road, Shanghai, 201804, ChinaInterdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, 4800 Caoan Road, Shanghai, 201804, ChinaCollege of Materials Science and Engineering, Fuzhou University, 2 North Wulongjiang Road, Fuzhou, 350108, China; Corresponding author.Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, 4800 Caoan Road, Shanghai, 201804, China; Corresponding author.Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, 4800 Caoan Road, Shanghai, 201804, China; Corresponding author.Thermal stability of thermoelectric devices plays a pivotal role in their practical applications. Chemical reaction/diffusion between thermoelectric materials and electrodes is one of the primary factors contributing to the degradation/failure of device performance at elevated temperatures. Introducing barrier layers to impede the behavior of chemical reactions has emerged as an effective approach for averting the failure of these devices. In this work, the FeSi is revealed to be a potent material of barrier layer in high-performance Mg2Si0.3Sn0.7 thermoelectric material based on the considerations of interfacial reaction energy and sinterability. The well-established bond in Mg2Si0.3Sn0.7/FeSi joint results in a low contact resistivity of ∼20 μΩ⸱cm2 and a conversion efficient of ∼6.5% for the Mg2Si0.3Sn0.7 single-leg device is achieved at a temperature difference of ∼290 K. Long-term measurements of the device at a hot-side temperature of 600 K reveal that the performance remains nearly invariable as time further increases, which suggests that the FeSi layer retards the chemical reaction/diffusion.http://www.sciencedirect.com/science/article/pii/S2352847825000346 |
| spellingShingle | Shanshan Hu Chen Huang Changyuan Li Long Yang Zhiwei Chen Baisheng Sa Wen Li Yanzhong Pei Thermal stability of FeSi as barrier layer in high-performance Mg2Si0.3Sn0.7 thermoelectric device Journal of Materiomics |
| title | Thermal stability of FeSi as barrier layer in high-performance Mg2Si0.3Sn0.7 thermoelectric device |
| title_full | Thermal stability of FeSi as barrier layer in high-performance Mg2Si0.3Sn0.7 thermoelectric device |
| title_fullStr | Thermal stability of FeSi as barrier layer in high-performance Mg2Si0.3Sn0.7 thermoelectric device |
| title_full_unstemmed | Thermal stability of FeSi as barrier layer in high-performance Mg2Si0.3Sn0.7 thermoelectric device |
| title_short | Thermal stability of FeSi as barrier layer in high-performance Mg2Si0.3Sn0.7 thermoelectric device |
| title_sort | thermal stability of fesi as barrier layer in high performance mg2si0 3sn0 7 thermoelectric device |
| url | http://www.sciencedirect.com/science/article/pii/S2352847825000346 |
| work_keys_str_mv | AT shanshanhu thermalstabilityoffesiasbarrierlayerinhighperformancemg2si03sn07thermoelectricdevice AT chenhuang thermalstabilityoffesiasbarrierlayerinhighperformancemg2si03sn07thermoelectricdevice AT changyuanli thermalstabilityoffesiasbarrierlayerinhighperformancemg2si03sn07thermoelectricdevice AT longyang thermalstabilityoffesiasbarrierlayerinhighperformancemg2si03sn07thermoelectricdevice AT zhiweichen thermalstabilityoffesiasbarrierlayerinhighperformancemg2si03sn07thermoelectricdevice AT baishengsa thermalstabilityoffesiasbarrierlayerinhighperformancemg2si03sn07thermoelectricdevice AT wenli thermalstabilityoffesiasbarrierlayerinhighperformancemg2si03sn07thermoelectricdevice AT yanzhongpei thermalstabilityoffesiasbarrierlayerinhighperformancemg2si03sn07thermoelectricdevice |