Transferrable, wet-chemistry-derived high-k amorphous metal oxide dielectrics for two-dimensional electronic devices
Abstract Two-dimensional (2D) materials hold transformative potential for next-generation electronics. The integration of high dielectric constant (k) dielectrics onto 2D semiconductors, while maintaining their pristine properties by low-defect-density interfaces, has proven challenging and become o...
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Nature Portfolio
2025-02-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-56815-9 |
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| author | Zhixin Yao Huifeng Tian U. Sasaki Huacong Sun Jingyi Hu Guodong Xue Ye Seul Jung Ruijie Li Zhenjiang Li PeiChi Liao Yihan Wang Lina Yang Zhang Ge Yin Xuanyu Zhang Yijie Luo Wenxi Li Yong Soo Cho Peizhi Liu Kaihui Liu Yanfeng Zhang Lifen Wang Junjie Guo Lei Liu |
| author_facet | Zhixin Yao Huifeng Tian U. Sasaki Huacong Sun Jingyi Hu Guodong Xue Ye Seul Jung Ruijie Li Zhenjiang Li PeiChi Liao Yihan Wang Lina Yang Zhang Ge Yin Xuanyu Zhang Yijie Luo Wenxi Li Yong Soo Cho Peizhi Liu Kaihui Liu Yanfeng Zhang Lifen Wang Junjie Guo Lei Liu |
| author_sort | Zhixin Yao |
| collection | DOAJ |
| description | Abstract Two-dimensional (2D) materials hold transformative potential for next-generation electronics. The integration of high dielectric constant (k) dielectrics onto 2D semiconductors, while maintaining their pristine properties by low-defect-density interfaces, has proven challenging and become one performance bottleneck of their practical implementation. Here, we report a wet-chemistry-based method to fabricate amorphous, transferable high-k (42.9) copper calcium titanate (CCTO) thin films as high-quality, dual-function dielectrics for 2D electronic devices. The chelation-based Pechini approach guarantees uniformity in this perovskite-type complex oxide, while the transferrable feature allows its harmless integration to 2D semiconductors interfacing with a nanogap. The CCTO-gated MoS2 devices exhibit a subthreshold swing down to 67 mV dec−1 and an ultra-small hysteresis of ~ 1 mV/(MV cm−1). Moreover, leveraging its visible-light active characteristics, we implement an electrically-manipulated, optically-activated nonvolatile floating gate in CCTO, enabling the reconfigurable execution of 9 basic Boolean logic in-sensor operations within a single field-effect device architecture. This advancement paves the way for the development of multifunctional, low-power 2D electronic systems by incorporating multifunctional conventional complex oxides. |
| format | Article |
| id | doaj-art-401d48265ecc4e8bba1710af1b2f8ff8 |
| institution | OA Journals |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-401d48265ecc4e8bba1710af1b2f8ff82025-08-20T02:12:59ZengNature PortfolioNature Communications2041-17232025-02-0116111110.1038/s41467-025-56815-9Transferrable, wet-chemistry-derived high-k amorphous metal oxide dielectrics for two-dimensional electronic devicesZhixin Yao0Huifeng Tian1U. Sasaki2Huacong Sun3Jingyi Hu4Guodong Xue5Ye Seul Jung6Ruijie Li7Zhenjiang Li8PeiChi Liao9Yihan Wang10Lina Yang Zhang11Ge Yin12Xuanyu Zhang13Yijie Luo14Wenxi Li15Yong Soo Cho16Peizhi Liu17Kaihui Liu18Yanfeng Zhang19Lifen Wang20Junjie Guo21Lei Liu22Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of TechnologySchool of Materials Science and Engineering, Peking UniversitySchool of Materials Science and Engineering, Peking UniversityBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesSchool of Materials Science and Engineering, Peking UniversityState Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking UniversityDepartment of Materials Science and Engineering, Yonsei UniversitySchool of Materials Science and Engineering, Peking UniversitySchool of Materials Science and Engineering, Peking UniversitySchool of Materials Science and Engineering, Peking UniversitySchool of Materials Science and Engineering, Peking UniversitySchool of Materials Science and Engineering, Peking UniversitySchool of Materials Science and Engineering, Peking UniversitySchool of Materials Science and Engineering, Peking UniversitySchool of Materials Science and Engineering, Peking UniversitySchool of Materials Science and Engineering, Peking UniversityDepartment of Materials Science and Engineering, Yonsei UniversityKey Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of TechnologyState Key Laboratory for Mesoscopic Physics, Frontiers Science Centre for Nano-optoelectronics, School of Physics, Peking UniversitySchool of Materials Science and Engineering, Peking UniversityBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesKey Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of TechnologySchool of Materials Science and Engineering, Peking UniversityAbstract Two-dimensional (2D) materials hold transformative potential for next-generation electronics. The integration of high dielectric constant (k) dielectrics onto 2D semiconductors, while maintaining their pristine properties by low-defect-density interfaces, has proven challenging and become one performance bottleneck of their practical implementation. Here, we report a wet-chemistry-based method to fabricate amorphous, transferable high-k (42.9) copper calcium titanate (CCTO) thin films as high-quality, dual-function dielectrics for 2D electronic devices. The chelation-based Pechini approach guarantees uniformity in this perovskite-type complex oxide, while the transferrable feature allows its harmless integration to 2D semiconductors interfacing with a nanogap. The CCTO-gated MoS2 devices exhibit a subthreshold swing down to 67 mV dec−1 and an ultra-small hysteresis of ~ 1 mV/(MV cm−1). Moreover, leveraging its visible-light active characteristics, we implement an electrically-manipulated, optically-activated nonvolatile floating gate in CCTO, enabling the reconfigurable execution of 9 basic Boolean logic in-sensor operations within a single field-effect device architecture. This advancement paves the way for the development of multifunctional, low-power 2D electronic systems by incorporating multifunctional conventional complex oxides.https://doi.org/10.1038/s41467-025-56815-9 |
| spellingShingle | Zhixin Yao Huifeng Tian U. Sasaki Huacong Sun Jingyi Hu Guodong Xue Ye Seul Jung Ruijie Li Zhenjiang Li PeiChi Liao Yihan Wang Lina Yang Zhang Ge Yin Xuanyu Zhang Yijie Luo Wenxi Li Yong Soo Cho Peizhi Liu Kaihui Liu Yanfeng Zhang Lifen Wang Junjie Guo Lei Liu Transferrable, wet-chemistry-derived high-k amorphous metal oxide dielectrics for two-dimensional electronic devices Nature Communications |
| title | Transferrable, wet-chemistry-derived high-k amorphous metal oxide dielectrics for two-dimensional electronic devices |
| title_full | Transferrable, wet-chemistry-derived high-k amorphous metal oxide dielectrics for two-dimensional electronic devices |
| title_fullStr | Transferrable, wet-chemistry-derived high-k amorphous metal oxide dielectrics for two-dimensional electronic devices |
| title_full_unstemmed | Transferrable, wet-chemistry-derived high-k amorphous metal oxide dielectrics for two-dimensional electronic devices |
| title_short | Transferrable, wet-chemistry-derived high-k amorphous metal oxide dielectrics for two-dimensional electronic devices |
| title_sort | transferrable wet chemistry derived high k amorphous metal oxide dielectrics for two dimensional electronic devices |
| url | https://doi.org/10.1038/s41467-025-56815-9 |
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