Study on the piezoresistivity of Cr-doped V2O3 thin film for MEMS sensor applications
Abstract Cr-doped V2O3 thin film shows a huge resistivity change with controlled epitaxial strain at room temperature as a result of a gradual Mott metal-insulator phase transition with strain. This novel piezoresistive transduction principle makes Cr-doped V2O3 thin film an appealing piezoresistive...
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| Format: | Article |
| Language: | English |
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Nature Publishing Group
2024-12-01
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| Series: | Microsystems & Nanoengineering |
| Online Access: | https://doi.org/10.1038/s41378-024-00807-0 |
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| author | Michiel Gidts Wei-Fan Hsu Maria Recaman Payo Shaswat Kushwaha Frederik Ceyssens Dominiek Reynaerts Jean-Pierre Locquet Michael Kraft Chen Wang |
| author_facet | Michiel Gidts Wei-Fan Hsu Maria Recaman Payo Shaswat Kushwaha Frederik Ceyssens Dominiek Reynaerts Jean-Pierre Locquet Michael Kraft Chen Wang |
| author_sort | Michiel Gidts |
| collection | DOAJ |
| description | Abstract Cr-doped V2O3 thin film shows a huge resistivity change with controlled epitaxial strain at room temperature as a result of a gradual Mott metal-insulator phase transition with strain. This novel piezoresistive transduction principle makes Cr-doped V2O3 thin film an appealing piezoresistive material. To investigate the piezoresistivity of Cr-doped V2O3 thin film for implementation in MEMS sensor applications, the resistance change of differently orientated Cr-doped V2O3 thin film piezoresistors with external strain change was measured. With a longitudinal gauge factor of 222 and a transversal gauge factor of 217 at room temperature, isotropic piezoresistivity coefficients were discovered. This results in a significant orientation-independent resistance change with stress for Cr-doped V2O3 thin film piezoresistors, potentially useful for new sensor applications. To demonstrate the integration of this new piezoresistive material in sensor applications, a micromachined pressure sensor with Cr-doped V2O3 thin film piezoresistors was designed, fabricated and characterized. At 20 °C, a sensitivity, offset, temperature coefficient of sensitivity and temperature coefficient of offset of 21.81 mV/V/bar, -25.73 mV/V, -0.076 mV/V/bar/°C and 0.182 mV/V/°C, respectively, were measured. This work paves the way for further research on this promising piezoresistive transduction principle for use in MEMS sensor applications. |
| format | Article |
| id | doaj-art-3fe56670a94f4697bd1c1bb0362b501e |
| institution | OA Journals |
| issn | 2055-7434 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Nature Publishing Group |
| record_format | Article |
| series | Microsystems & Nanoengineering |
| spelling | doaj-art-3fe56670a94f4697bd1c1bb0362b501e2025-08-20T01:56:48ZengNature Publishing GroupMicrosystems & Nanoengineering2055-74342024-12-0110111210.1038/s41378-024-00807-0Study on the piezoresistivity of Cr-doped V2O3 thin film for MEMS sensor applicationsMichiel Gidts0Wei-Fan Hsu1Maria Recaman Payo2Shaswat Kushwaha3Frederik Ceyssens4Dominiek Reynaerts5Jean-Pierre Locquet6Michael Kraft7Chen Wang8Micro- and Nanosystems, Department of Electrical Engineering, KU LeuvenFunctional Oxides Coating Center, Department of Physics and Astronomy, KU LeuvenFunctional Oxides Coating Center, Department of Physics and Astronomy, KU LeuvenManufacturing Processes and Systems, Department of Mechanical Engineering, KU LeuvenMicro- and Nanosystems, Department of Electrical Engineering, KU LeuvenManufacturing Processes and Systems, Department of Mechanical Engineering, KU LeuvenFunctional Oxides Coating Center, Department of Physics and Astronomy, KU LeuvenMicro- and Nanosystems, Department of Electrical Engineering, KU LeuvenMicro- and Nanosystems, Department of Electrical Engineering, KU LeuvenAbstract Cr-doped V2O3 thin film shows a huge resistivity change with controlled epitaxial strain at room temperature as a result of a gradual Mott metal-insulator phase transition with strain. This novel piezoresistive transduction principle makes Cr-doped V2O3 thin film an appealing piezoresistive material. To investigate the piezoresistivity of Cr-doped V2O3 thin film for implementation in MEMS sensor applications, the resistance change of differently orientated Cr-doped V2O3 thin film piezoresistors with external strain change was measured. With a longitudinal gauge factor of 222 and a transversal gauge factor of 217 at room temperature, isotropic piezoresistivity coefficients were discovered. This results in a significant orientation-independent resistance change with stress for Cr-doped V2O3 thin film piezoresistors, potentially useful for new sensor applications. To demonstrate the integration of this new piezoresistive material in sensor applications, a micromachined pressure sensor with Cr-doped V2O3 thin film piezoresistors was designed, fabricated and characterized. At 20 °C, a sensitivity, offset, temperature coefficient of sensitivity and temperature coefficient of offset of 21.81 mV/V/bar, -25.73 mV/V, -0.076 mV/V/bar/°C and 0.182 mV/V/°C, respectively, were measured. This work paves the way for further research on this promising piezoresistive transduction principle for use in MEMS sensor applications.https://doi.org/10.1038/s41378-024-00807-0 |
| spellingShingle | Michiel Gidts Wei-Fan Hsu Maria Recaman Payo Shaswat Kushwaha Frederik Ceyssens Dominiek Reynaerts Jean-Pierre Locquet Michael Kraft Chen Wang Study on the piezoresistivity of Cr-doped V2O3 thin film for MEMS sensor applications Microsystems & Nanoengineering |
| title | Study on the piezoresistivity of Cr-doped V2O3 thin film for MEMS sensor applications |
| title_full | Study on the piezoresistivity of Cr-doped V2O3 thin film for MEMS sensor applications |
| title_fullStr | Study on the piezoresistivity of Cr-doped V2O3 thin film for MEMS sensor applications |
| title_full_unstemmed | Study on the piezoresistivity of Cr-doped V2O3 thin film for MEMS sensor applications |
| title_short | Study on the piezoresistivity of Cr-doped V2O3 thin film for MEMS sensor applications |
| title_sort | study on the piezoresistivity of cr doped v2o3 thin film for mems sensor applications |
| url | https://doi.org/10.1038/s41378-024-00807-0 |
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