Electron diffusion at Sn perovskite/fullerene derivative interfaces and its influence on open-circuit voltage
Abstract Tin-based perovskite solar cells (PSCs) are the most promising alternatives to toxic lead-based ones. However, the loss in open-circuit voltage (V OC) remains an important issue. Improvement of V OC has been achieved by using a fullerene derivative, indene-C60 bisadduct (ICBA), as the elect...
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| Format: | Article |
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Nature Portfolio
2025-05-01
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| Series: | npj Flexible Electronics |
| Online Access: | https://doi.org/10.1038/s41528-025-00424-5 |
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| author | Atushi Sato Seira Yamaguchi Akio Hasegawa Yukihiro Shimoi Tomoya Nakamura Atsushi Wakamiya Kazuhiro Marumoto |
| author_facet | Atushi Sato Seira Yamaguchi Akio Hasegawa Yukihiro Shimoi Tomoya Nakamura Atsushi Wakamiya Kazuhiro Marumoto |
| author_sort | Atushi Sato |
| collection | DOAJ |
| description | Abstract Tin-based perovskite solar cells (PSCs) are the most promising alternatives to toxic lead-based ones. However, the loss in open-circuit voltage (V OC) remains an important issue. Improvement of V OC has been achieved by using a fullerene derivative, indene-C60 bisadduct (ICBA), as the electron transporting layer (ETL). For further V OC improvement, the V OC improvement mechanisms must be clarified. Herein, we show, at a molecular level, V OC improvement mechanisms by an ICBA ETL in tin-based PSCs. Electron spin resonance spectroscopy reveals that electron diffusion from perovskite to ETL occurs at perovskite/ETL interfaces, producing unfavorable upward band-bending of perovskite. Employing ICBA with a shallower LUMO level suppresses the upward band-bending as well as reduces the energy offset with the conduction band minimum of perovskite. Suppressing this unfavorable upward band-bending reduces interface recombination at perovskite/ETL interfaces and contributes to V OC improvement. These insights support efficient optimization of the charge-transporting layer for additional improvement of V OC. |
| format | Article |
| id | doaj-art-3f67a2e2bf244dcc8cc90218f3fa9a72 |
| institution | OA Journals |
| issn | 2397-4621 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj Flexible Electronics |
| spelling | doaj-art-3f67a2e2bf244dcc8cc90218f3fa9a722025-08-20T02:00:13ZengNature Portfolionpj Flexible Electronics2397-46212025-05-01911910.1038/s41528-025-00424-5Electron diffusion at Sn perovskite/fullerene derivative interfaces and its influence on open-circuit voltageAtushi Sato0Seira Yamaguchi1Akio Hasegawa2Yukihiro Shimoi3Tomoya Nakamura4Atsushi Wakamiya5Kazuhiro Marumoto6Department of Materials Science, Institute of Pure and Applied Sciences, University of TsukubaDepartment of Materials Science, Institute of Pure and Applied Sciences, University of TsukubaInstitute for Chemical Research, Kyoto UniversityDepartment of Materials Science, Institute of Pure and Applied Sciences, University of TsukubaInstitute for Chemical Research, Kyoto UniversityInstitute for Chemical Research, Kyoto UniversityDepartment of Materials Science, Institute of Pure and Applied Sciences, University of TsukubaAbstract Tin-based perovskite solar cells (PSCs) are the most promising alternatives to toxic lead-based ones. However, the loss in open-circuit voltage (V OC) remains an important issue. Improvement of V OC has been achieved by using a fullerene derivative, indene-C60 bisadduct (ICBA), as the electron transporting layer (ETL). For further V OC improvement, the V OC improvement mechanisms must be clarified. Herein, we show, at a molecular level, V OC improvement mechanisms by an ICBA ETL in tin-based PSCs. Electron spin resonance spectroscopy reveals that electron diffusion from perovskite to ETL occurs at perovskite/ETL interfaces, producing unfavorable upward band-bending of perovskite. Employing ICBA with a shallower LUMO level suppresses the upward band-bending as well as reduces the energy offset with the conduction band minimum of perovskite. Suppressing this unfavorable upward band-bending reduces interface recombination at perovskite/ETL interfaces and contributes to V OC improvement. These insights support efficient optimization of the charge-transporting layer for additional improvement of V OC.https://doi.org/10.1038/s41528-025-00424-5 |
| spellingShingle | Atushi Sato Seira Yamaguchi Akio Hasegawa Yukihiro Shimoi Tomoya Nakamura Atsushi Wakamiya Kazuhiro Marumoto Electron diffusion at Sn perovskite/fullerene derivative interfaces and its influence on open-circuit voltage npj Flexible Electronics |
| title | Electron diffusion at Sn perovskite/fullerene derivative interfaces and its influence on open-circuit voltage |
| title_full | Electron diffusion at Sn perovskite/fullerene derivative interfaces and its influence on open-circuit voltage |
| title_fullStr | Electron diffusion at Sn perovskite/fullerene derivative interfaces and its influence on open-circuit voltage |
| title_full_unstemmed | Electron diffusion at Sn perovskite/fullerene derivative interfaces and its influence on open-circuit voltage |
| title_short | Electron diffusion at Sn perovskite/fullerene derivative interfaces and its influence on open-circuit voltage |
| title_sort | electron diffusion at sn perovskite fullerene derivative interfaces and its influence on open circuit voltage |
| url | https://doi.org/10.1038/s41528-025-00424-5 |
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