A Junction Temperature Prediction Method Based on Multivariate Linear Regression Using Current Fall Characteristics of SiC MOSFETs
The junction temperature (<i>T</i><sub>j</sub>) is a key parameter reflecting the thermal behavior of Silicon carbide (SiC) MOSFETs and is essential for condition monitoring and reliability assessment in power electronic systems. However, the limited temperature sensitivity o...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-08-01
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| Series: | Sensors |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1424-8220/25/15/4828 |
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