A Junction Temperature Prediction Method Based on Multivariate Linear Regression Using Current Fall Characteristics of SiC MOSFETs

The junction temperature (<i>T</i><sub>j</sub>) is a key parameter reflecting the thermal behavior of Silicon carbide (SiC) MOSFETs and is essential for condition monitoring and reliability assessment in power electronic systems. However, the limited temperature sensitivity o...

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Bibliographic Details
Main Authors: Haihong Qin, Yang Zhang, Yu Zeng, Yuan Kang, Ziyue Zhu, Fan Wu
Format: Article
Language:English
Published: MDPI AG 2025-08-01
Series:Sensors
Subjects:
Online Access:https://www.mdpi.com/1424-8220/25/15/4828
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