A Junction Temperature Prediction Method Based on Multivariate Linear Regression Using Current Fall Characteristics of SiC MOSFETs

A Junction Temperature Prediction Method Based on Multivariate Linear Regression Using Current Fall Characteristics of SiC MOSFETs

The junction temperature (<i>T</i><sub>j</sub>) is a key parameter reflecting the thermal behavior of Silicon carbide (SiC) MOSFETs and is essential for condition monitoring and reliability assessment in power electronic systems. However, the limited temperature sensitivity o...

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Bibliographic Details
Main Authors: Haihong Qin, Yang Zhang, Yu Zeng, Yuan Kang, Ziyue Zhu, Fan Wu
Format: Article
Language:English
Published: MDPI AG 2025-08-01
Series:Sensors
Subjects:
current fall time
current fall energy loss
junction temperature
condition monitoring
temperature-sensitive electrical parameter (TSEP)
Online Access:https://www.mdpi.com/1424-8220/25/15/4828
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Summary:The junction temperature (<i>T</i><sub>j</sub>) is a key parameter reflecting the thermal behavior of Silicon carbide (SiC) MOSFETs and is essential for condition monitoring and reliability assessment in power electronic systems. However, the limited temperature sensitivity of switching characteristics makes it difficult for traditional single temperature-sensitive electrical parameters (TSEPs) to achieve accurate estimation. To address this challenge and enable practical thermal sensing applications, this study proposes an accurate, application-oriented <i>T</i><sub>j</sub> estimation method based on multivariate linear regression (MLR) using turn-off current fall time (<i>t</i><sub>fi</sub>) and fall loss (<i>E</i><sub>fi</sub>) as complementary TSEPs. First, the feasibility of using current fall time and current fall energy loss as TSEPs is demonstrated. Then, a coupled junction temperature prediction model is developed based on multivariate linear regression using <i>t</i><sub>fi</sub> and <i>E</i><sub>fi</sub>. The proposed method is experimentally validated through comparative analysis. Experimental results demonstrate that the proposed method achieves high prediction accuracy, highlighting its effectiveness and superiority in MLR approach based on the current fall phase characteristics of SiC MOSFETs. This method offers promising prospects for enhancing the condition monitoring, reliability assessment, and intelligent sensing capabilities of power electronics systems.
ISSN:1424-8220

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