Phase Transition Process of Graphite to Diamond Induced by Monodispersed Tantalum Atoms at Ordinary Pressure
Abstract The transformation of graphite into diamond (2–10 nm) at ordinary pressure by monodispersed Ta atoms was recently reported, while the effects of Ta concentration on the transition process remain obscure. Here, by regulating the Ta wire treatment time, as well as the annealing time and tempe...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2025-03-01
|
| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202411504 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849723937634648064 |
|---|---|
| author | Zhiguang Zhu Chengke Chen Shaohua Lu Xiao Li Xiaojun Hu |
| author_facet | Zhiguang Zhu Chengke Chen Shaohua Lu Xiao Li Xiaojun Hu |
| author_sort | Zhiguang Zhu |
| collection | DOAJ |
| description | Abstract The transformation of graphite into diamond (2–10 nm) at ordinary pressure by monodispersed Ta atoms was recently reported, while the effects of Ta concentration on the transition process remain obscure. Here, by regulating the Ta wire treatment time, as well as the annealing time and temperature, larger diamond grians (5–20 nm) are successfully synthesized, and the transition process of graphite to diamond is revealed to vary with Ta concentration. Specifically, short Ta wire treatments (5–10 min) induce graphite to form a “circle” structure and transforms into diamond directly after annealing. Long Ta wire treatments (15–25 min) produce larger and more “circle” structures, containing an increased number of graphite layers. After annealing at 1100 °C for 30–120 min, graphite first transforms into amorphous carbon, then to i‐Carbon and n‐Diamond, and finally to diamond. Notably, a large amount of n‐Diamond and diamond are formed after 120 min annealing. By modulating the annealing temperature from 500 to 1200 °C for 30 min, diamond is already obtained at 500 °C, and hexagonal diamond up to 20 nm in size at 1200 °C. This provides a fresh insight into the graphite/diamond transition process and an approach for diamond synthesis. |
| format | Article |
| id | doaj-art-3f30649004a74d1d8a6b65bb7f816341 |
| institution | DOAJ |
| issn | 2198-3844 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj-art-3f30649004a74d1d8a6b65bb7f8163412025-08-20T03:10:53ZengWileyAdvanced Science2198-38442025-03-011210n/an/a10.1002/advs.202411504Phase Transition Process of Graphite to Diamond Induced by Monodispersed Tantalum Atoms at Ordinary PressureZhiguang Zhu0Chengke Chen1Shaohua Lu2Xiao Li3Xiaojun Hu4College of Materials Science and Engineering Zhejiang University of Technology Hangzhou 310014 P. R. ChinaCollege of Materials Science and Engineering Zhejiang University of Technology Hangzhou 310014 P. R. ChinaCollege of Materials Science and Engineering Zhejiang University of Technology Hangzhou 310014 P. R. ChinaCollege of Materials Science and Engineering Zhejiang University of Technology Hangzhou 310014 P. R. ChinaCollege of Materials Science and Engineering Zhejiang University of Technology Hangzhou 310014 P. R. ChinaAbstract The transformation of graphite into diamond (2–10 nm) at ordinary pressure by monodispersed Ta atoms was recently reported, while the effects of Ta concentration on the transition process remain obscure. Here, by regulating the Ta wire treatment time, as well as the annealing time and temperature, larger diamond grians (5–20 nm) are successfully synthesized, and the transition process of graphite to diamond is revealed to vary with Ta concentration. Specifically, short Ta wire treatments (5–10 min) induce graphite to form a “circle” structure and transforms into diamond directly after annealing. Long Ta wire treatments (15–25 min) produce larger and more “circle” structures, containing an increased number of graphite layers. After annealing at 1100 °C for 30–120 min, graphite first transforms into amorphous carbon, then to i‐Carbon and n‐Diamond, and finally to diamond. Notably, a large amount of n‐Diamond and diamond are formed after 120 min annealing. By modulating the annealing temperature from 500 to 1200 °C for 30 min, diamond is already obtained at 500 °C, and hexagonal diamond up to 20 nm in size at 1200 °C. This provides a fresh insight into the graphite/diamond transition process and an approach for diamond synthesis.https://doi.org/10.1002/advs.202411504annealingdiamondgraphiteordinary‐pressurephase transition |
| spellingShingle | Zhiguang Zhu Chengke Chen Shaohua Lu Xiao Li Xiaojun Hu Phase Transition Process of Graphite to Diamond Induced by Monodispersed Tantalum Atoms at Ordinary Pressure Advanced Science annealing diamond graphite ordinary‐pressure phase transition |
| title | Phase Transition Process of Graphite to Diamond Induced by Monodispersed Tantalum Atoms at Ordinary Pressure |
| title_full | Phase Transition Process of Graphite to Diamond Induced by Monodispersed Tantalum Atoms at Ordinary Pressure |
| title_fullStr | Phase Transition Process of Graphite to Diamond Induced by Monodispersed Tantalum Atoms at Ordinary Pressure |
| title_full_unstemmed | Phase Transition Process of Graphite to Diamond Induced by Monodispersed Tantalum Atoms at Ordinary Pressure |
| title_short | Phase Transition Process of Graphite to Diamond Induced by Monodispersed Tantalum Atoms at Ordinary Pressure |
| title_sort | phase transition process of graphite to diamond induced by monodispersed tantalum atoms at ordinary pressure |
| topic | annealing diamond graphite ordinary‐pressure phase transition |
| url | https://doi.org/10.1002/advs.202411504 |
| work_keys_str_mv | AT zhiguangzhu phasetransitionprocessofgraphitetodiamondinducedbymonodispersedtantalumatomsatordinarypressure AT chengkechen phasetransitionprocessofgraphitetodiamondinducedbymonodispersedtantalumatomsatordinarypressure AT shaohualu phasetransitionprocessofgraphitetodiamondinducedbymonodispersedtantalumatomsatordinarypressure AT xiaoli phasetransitionprocessofgraphitetodiamondinducedbymonodispersedtantalumatomsatordinarypressure AT xiaojunhu phasetransitionprocessofgraphitetodiamondinducedbymonodispersedtantalumatomsatordinarypressure |