CONSTRUCTION AND TECHNOLOGICAL CHARACTERISTICSOF WIDE BANDGAP SEMICONDUCTORS SENSORS
The development and research of new constructive solutions, materials and technologies for sensor systems production is an actual problem. The transistor with high electron mobility (HEMT) is increasingly being used in such systems. The device-technological simulation of the characteristics of HEMT,...
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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| Online Access: | https://doklady.bsuir.by/jour/article/view/577 |
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| _version_ | 1849398534735921152 |
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| author | V. S. Volchek D. HA. Dao I. Yu. Lovshenko V. R. Stempitsky |
| author_facet | V. S. Volchek D. HA. Dao I. Yu. Lovshenko V. R. Stempitsky |
| author_sort | V. S. Volchek |
| collection | DOAJ |
| description | The development and research of new constructive solutions, materials and technologies for sensor systems production is an actual problem. The transistor with high electron mobility (HEMT) is increasingly being used in such systems. The device-technological simulation of the characteristics of HEMT, based on AlGaN / GaN using different substrate materials has implemented. The influence of the percentage of Al and Ga in combination Alх Gaх-1N on the characteristics of considered unit has studied. |
| format | Article |
| id | doaj-art-3f262c1746e94d25871815a4af81eea7 |
| institution | Kabale University |
| issn | 1729-7648 |
| language | Russian |
| publishDate | 2019-06-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj-art-3f262c1746e94d25871815a4af81eea72025-08-20T03:38:35ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-010799105576CONSTRUCTION AND TECHNOLOGICAL CHARACTERISTICSOF WIDE BANDGAP SEMICONDUCTORS SENSORSV. S. Volchek0D. HA. Dao1I. Yu. Lovshenko2V. R. Stempitsky3Белорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиБелорусский государственный университет информатики и радиоэлектроникиThe development and research of new constructive solutions, materials and technologies for sensor systems production is an actual problem. The transistor with high electron mobility (HEMT) is increasingly being used in such systems. The device-technological simulation of the characteristics of HEMT, based on AlGaN / GaN using different substrate materials has implemented. The influence of the percentage of Al and Ga in combination Alх Gaх-1N on the characteristics of considered unit has studied.https://doklady.bsuir.by/jour/article/view/577сенсорная систематранзистор с высокой подвижностью электроновнитрид галлияприборно-технологическое моделирование |
| spellingShingle | V. S. Volchek D. HA. Dao I. Yu. Lovshenko V. R. Stempitsky CONSTRUCTION AND TECHNOLOGICAL CHARACTERISTICSOF WIDE BANDGAP SEMICONDUCTORS SENSORS Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki сенсорная система транзистор с высокой подвижностью электронов нитрид галлия приборно-технологическое моделирование |
| title | CONSTRUCTION AND TECHNOLOGICAL CHARACTERISTICSOF WIDE BANDGAP SEMICONDUCTORS SENSORS |
| title_full | CONSTRUCTION AND TECHNOLOGICAL CHARACTERISTICSOF WIDE BANDGAP SEMICONDUCTORS SENSORS |
| title_fullStr | CONSTRUCTION AND TECHNOLOGICAL CHARACTERISTICSOF WIDE BANDGAP SEMICONDUCTORS SENSORS |
| title_full_unstemmed | CONSTRUCTION AND TECHNOLOGICAL CHARACTERISTICSOF WIDE BANDGAP SEMICONDUCTORS SENSORS |
| title_short | CONSTRUCTION AND TECHNOLOGICAL CHARACTERISTICSOF WIDE BANDGAP SEMICONDUCTORS SENSORS |
| title_sort | construction and technological characteristicsof wide bandgap semiconductors sensors |
| topic | сенсорная система транзистор с высокой подвижностью электронов нитрид галлия приборно-технологическое моделирование |
| url | https://doklady.bsuir.by/jour/article/view/577 |
| work_keys_str_mv | AT vsvolchek constructionandtechnologicalcharacteristicsofwidebandgapsemiconductorssensors AT dhadao constructionandtechnologicalcharacteristicsofwidebandgapsemiconductorssensors AT iyulovshenko constructionandtechnologicalcharacteristicsofwidebandgapsemiconductorssensors AT vrstempitsky constructionandtechnologicalcharacteristicsofwidebandgapsemiconductorssensors |