ITZO-Based Self-Aligned Top Gate Thin-Film Transistor with Minimum Parasitic Capacitance for Long-Retention 2T0C DRAM
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
American Chemical Society
2024-12-01
|
| Series: | ACS Omega |
| Online Access: | https://doi.org/10.1021/acsomega.4c08274 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1841536783151529984 |
|---|---|
| author | Jeong-Min Park Sein Lee Junseo Lee Jang-Yeon Kwon |
| author_facet | Jeong-Min Park Sein Lee Junseo Lee Jang-Yeon Kwon |
| author_sort | Jeong-Min Park |
| collection | DOAJ |
| format | Article |
| id | doaj-art-3f16681bbece4c33b92e13a70d9de08c |
| institution | Kabale University |
| issn | 2470-1343 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | American Chemical Society |
| record_format | Article |
| series | ACS Omega |
| spelling | doaj-art-3f16681bbece4c33b92e13a70d9de08c2025-01-14T11:10:27ZengAmerican Chemical SocietyACS Omega2470-13432024-12-011011006101110.1021/acsomega.4c08274ITZO-Based Self-Aligned Top Gate Thin-Film Transistor with Minimum Parasitic Capacitance for Long-Retention 2T0C DRAMJeong-Min Park0Sein Lee1Junseo Lee2Jang-Yeon Kwon3School of Integrated Technology, Yonsei University, Seoul, Republic of KoreaSchool of Integrated Technology, Yonsei University, Seoul, Republic of KoreaSchool of Integrated Technology, Yonsei University, Seoul, Republic of KoreaSchool of Integrated Technology, Yonsei University, Seoul, Republic of Koreahttps://doi.org/10.1021/acsomega.4c08274 |
| spellingShingle | Jeong-Min Park Sein Lee Junseo Lee Jang-Yeon Kwon ITZO-Based Self-Aligned Top Gate Thin-Film Transistor with Minimum Parasitic Capacitance for Long-Retention 2T0C DRAM ACS Omega |
| title | ITZO-Based Self-Aligned Top Gate Thin-Film Transistor with Minimum Parasitic Capacitance for Long-Retention 2T0C DRAM |
| title_full | ITZO-Based Self-Aligned Top Gate Thin-Film Transistor with Minimum Parasitic Capacitance for Long-Retention 2T0C DRAM |
| title_fullStr | ITZO-Based Self-Aligned Top Gate Thin-Film Transistor with Minimum Parasitic Capacitance for Long-Retention 2T0C DRAM |
| title_full_unstemmed | ITZO-Based Self-Aligned Top Gate Thin-Film Transistor with Minimum Parasitic Capacitance for Long-Retention 2T0C DRAM |
| title_short | ITZO-Based Self-Aligned Top Gate Thin-Film Transistor with Minimum Parasitic Capacitance for Long-Retention 2T0C DRAM |
| title_sort | itzo based self aligned top gate thin film transistor with minimum parasitic capacitance for long retention 2t0c dram |
| url | https://doi.org/10.1021/acsomega.4c08274 |
| work_keys_str_mv | AT jeongminpark itzobasedselfalignedtopgatethinfilmtransistorwithminimumparasiticcapacitanceforlongretention2t0cdram AT seinlee itzobasedselfalignedtopgatethinfilmtransistorwithminimumparasiticcapacitanceforlongretention2t0cdram AT junseolee itzobasedselfalignedtopgatethinfilmtransistorwithminimumparasiticcapacitanceforlongretention2t0cdram AT jangyeonkwon itzobasedselfalignedtopgatethinfilmtransistorwithminimumparasiticcapacitanceforlongretention2t0cdram |