Monocrystalline Silicon PERC Solar Cell with Rear-Side AlOx Film Formed by Furnace Oxidation
In this study, AlOx passivation layers on the rear sides of silicon PERC solar cells are formed by thermally oxidizing 3 nm-thick aluminum films deposited in advance by an e-gun evaporator. The oxidation process is conducted in a furnace full of oxygen at 400°C for a duration of 10 minutes, followed...
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| Format: | Article |
| Language: | English |
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Wiley
2023-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2023/3312619 |
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| _version_ | 1850185806335967232 |
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| author | Ching-Hui Hsu Da-Yao Lao Likarn Wang |
| author_facet | Ching-Hui Hsu Da-Yao Lao Likarn Wang |
| author_sort | Ching-Hui Hsu |
| collection | DOAJ |
| description | In this study, AlOx passivation layers on the rear sides of silicon PERC solar cells are formed by thermally oxidizing 3 nm-thick aluminum films deposited in advance by an e-gun evaporator. The oxidation process is conducted in a furnace full of oxygen at 400°C for a duration of 10 minutes, followed by annealing for a duration of 3 minutes at 700°C, and then the stacking of SiNx films on the back surfaces. After that, a second annealing process is done at 400°C for a duration of 10 minutes to repair the defects resulting from the bombardment of ions on the passivation layer. With the thermal oxidation method applied, we confirmed the existence of an AlOx passivation layer with a negative charge density of −3.21×1012 cm-2 for an annealed sample, in contrast to −6.17×1011 cm-2 for an unannealed sample. |
| format | Article |
| id | doaj-art-3f15c02449084df8bf7c37e72b8e8e06 |
| institution | OA Journals |
| issn | 1687-529X |
| language | English |
| publishDate | 2023-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-3f15c02449084df8bf7c37e72b8e8e062025-08-20T02:16:33ZengWileyInternational Journal of Photoenergy1687-529X2023-01-01202310.1155/2023/3312619Monocrystalline Silicon PERC Solar Cell with Rear-Side AlOx Film Formed by Furnace OxidationChing-Hui Hsu0Da-Yao Lao1Likarn Wang2Institute of Photonics TechnologiesInstitute of Photonics TechnologiesInstitute of Photonics TechnologiesIn this study, AlOx passivation layers on the rear sides of silicon PERC solar cells are formed by thermally oxidizing 3 nm-thick aluminum films deposited in advance by an e-gun evaporator. The oxidation process is conducted in a furnace full of oxygen at 400°C for a duration of 10 minutes, followed by annealing for a duration of 3 minutes at 700°C, and then the stacking of SiNx films on the back surfaces. After that, a second annealing process is done at 400°C for a duration of 10 minutes to repair the defects resulting from the bombardment of ions on the passivation layer. With the thermal oxidation method applied, we confirmed the existence of an AlOx passivation layer with a negative charge density of −3.21×1012 cm-2 for an annealed sample, in contrast to −6.17×1011 cm-2 for an unannealed sample.http://dx.doi.org/10.1155/2023/3312619 |
| spellingShingle | Ching-Hui Hsu Da-Yao Lao Likarn Wang Monocrystalline Silicon PERC Solar Cell with Rear-Side AlOx Film Formed by Furnace Oxidation International Journal of Photoenergy |
| title | Monocrystalline Silicon PERC Solar Cell with Rear-Side AlOx Film Formed by Furnace Oxidation |
| title_full | Monocrystalline Silicon PERC Solar Cell with Rear-Side AlOx Film Formed by Furnace Oxidation |
| title_fullStr | Monocrystalline Silicon PERC Solar Cell with Rear-Side AlOx Film Formed by Furnace Oxidation |
| title_full_unstemmed | Monocrystalline Silicon PERC Solar Cell with Rear-Side AlOx Film Formed by Furnace Oxidation |
| title_short | Monocrystalline Silicon PERC Solar Cell with Rear-Side AlOx Film Formed by Furnace Oxidation |
| title_sort | monocrystalline silicon perc solar cell with rear side alox film formed by furnace oxidation |
| url | http://dx.doi.org/10.1155/2023/3312619 |
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