Strain Fluctuations Unlock Ferroelectricity in Wurtzites
Abstract Ferroelectrics are of practical interest for non‐volatile data storage due to their reorientable, crystallographically defined polarization. Yet efforts to integrate conventional ferroelectrics into ultrathin memories have been frustrated by film‐thickness limitations, which impede polariza...
Saved in:
| Main Authors: | , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-04-01
|
| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400567 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|