Flexible Synaptic Memristors With Controlled Rigidity in Zirconium‐Oxo Clusters for High‐Precision Neuromorphic Computing

Abstract Flexible memristors are promising candidates for multifunctional neuromorphic computing applications, overcoming the limitations of conventional computing devices. However, unpredictable switching behavior and poor mechanical stability in conventional memristors present significant challeng...

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Main Authors: Jae‐Hyeok Cho, Suk Yeop Chun, Ga Hye Kim, Panithan Sriboriboon, Sanghee Han, Seung Beom Shin, Jeehoon Kim, San Nam, Yunseok Kim, Yong‐Hoon Kim, Jung Ho Yoon, Myung‐Gil Kim
Format: Article
Language:English
Published: Wiley 2025-03-01
Series:Advanced Science
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Online Access:https://doi.org/10.1002/advs.202412289
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author Jae‐Hyeok Cho
Suk Yeop Chun
Ga Hye Kim
Panithan Sriboriboon
Sanghee Han
Seung Beom Shin
Jeehoon Kim
San Nam
Yunseok Kim
Yong‐Hoon Kim
Jung Ho Yoon
Myung‐Gil Kim
author_facet Jae‐Hyeok Cho
Suk Yeop Chun
Ga Hye Kim
Panithan Sriboriboon
Sanghee Han
Seung Beom Shin
Jeehoon Kim
San Nam
Yunseok Kim
Yong‐Hoon Kim
Jung Ho Yoon
Myung‐Gil Kim
author_sort Jae‐Hyeok Cho
collection DOAJ
description Abstract Flexible memristors are promising candidates for multifunctional neuromorphic computing applications, overcoming the limitations of conventional computing devices. However, unpredictable switching behavior and poor mechanical stability in conventional memristors present significant challenges to achieving device reliability. Here, a reliable and flexible memristor using zirconium‐oxo cluster (Zr6O4OH4(OMc)12) as the resistive switching layer is demonstrated. The optimization of the structural rigidity of the hybrid oxo‐cluster network by thermal polymerization allows the precise formation of dispersed conductive cluster networks, enhancing the repeatability of the resistive switching with mechanical flexibility. The optimized memristor exhibits endurance of ∼104 cycles and stable memory retention performance up to 104 s, maintaining a high ION/IOFF ratio of 104 under a bending radius of 2.5 mm. Moreover, the device achieves a pattern recognition accuracy of 97.44%, enabled by highly symmetric analog switching with multilevel conductance states. These results highlight that hybrid metal‐oxo clusters can provide novel material design principles for flexible and reliable neuromorphic applications, contributing to the development of artificial neural networks.
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spelling doaj-art-3eeecfa01fdd477ba72db7c26d61b63e2025-08-20T02:24:47ZengWileyAdvanced Science2198-38442025-03-011211n/an/a10.1002/advs.202412289Flexible Synaptic Memristors With Controlled Rigidity in Zirconium‐Oxo Clusters for High‐Precision Neuromorphic ComputingJae‐Hyeok Cho0Suk Yeop Chun1Ga Hye Kim2Panithan Sriboriboon3Sanghee Han4Seung Beom Shin5Jeehoon Kim6San Nam7Yunseok Kim8Yong‐Hoon Kim9Jung Ho Yoon10Myung‐Gil Kim11School of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 16419 Republic of KoreaKU‐KIST Graduate School of Converging Science and Technology Korea University Seoul 02841 Republic of KoreaSchool of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 16419 Republic of KoreaSchool of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 16419 Republic of KoreaSchool of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 16419 Republic of KoreaSchool of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 16419 Republic of KoreaSchool of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 16419 Republic of KoreaSchool of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 16419 Republic of KoreaSchool of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 16419 Republic of KoreaSchool of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 16419 Republic of KoreaSchool of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 16419 Republic of KoreaSchool of Advanced Materials Science and Engineering Sungkyunkwan University Suwon 16419 Republic of KoreaAbstract Flexible memristors are promising candidates for multifunctional neuromorphic computing applications, overcoming the limitations of conventional computing devices. However, unpredictable switching behavior and poor mechanical stability in conventional memristors present significant challenges to achieving device reliability. Here, a reliable and flexible memristor using zirconium‐oxo cluster (Zr6O4OH4(OMc)12) as the resistive switching layer is demonstrated. The optimization of the structural rigidity of the hybrid oxo‐cluster network by thermal polymerization allows the precise formation of dispersed conductive cluster networks, enhancing the repeatability of the resistive switching with mechanical flexibility. The optimized memristor exhibits endurance of ∼104 cycles and stable memory retention performance up to 104 s, maintaining a high ION/IOFF ratio of 104 under a bending radius of 2.5 mm. Moreover, the device achieves a pattern recognition accuracy of 97.44%, enabled by highly symmetric analog switching with multilevel conductance states. These results highlight that hybrid metal‐oxo clusters can provide novel material design principles for flexible and reliable neuromorphic applications, contributing to the development of artificial neural networks.https://doi.org/10.1002/advs.202412289flexible memristorsmetal‐oxo clustersneuromorphic computingssynaptic devicesZr6O4OH4(OMc)12
spellingShingle Jae‐Hyeok Cho
Suk Yeop Chun
Ga Hye Kim
Panithan Sriboriboon
Sanghee Han
Seung Beom Shin
Jeehoon Kim
San Nam
Yunseok Kim
Yong‐Hoon Kim
Jung Ho Yoon
Myung‐Gil Kim
Flexible Synaptic Memristors With Controlled Rigidity in Zirconium‐Oxo Clusters for High‐Precision Neuromorphic Computing
Advanced Science
flexible memristors
metal‐oxo clusters
neuromorphic computings
synaptic devices
Zr6O4OH4(OMc)12
title Flexible Synaptic Memristors With Controlled Rigidity in Zirconium‐Oxo Clusters for High‐Precision Neuromorphic Computing
title_full Flexible Synaptic Memristors With Controlled Rigidity in Zirconium‐Oxo Clusters for High‐Precision Neuromorphic Computing
title_fullStr Flexible Synaptic Memristors With Controlled Rigidity in Zirconium‐Oxo Clusters for High‐Precision Neuromorphic Computing
title_full_unstemmed Flexible Synaptic Memristors With Controlled Rigidity in Zirconium‐Oxo Clusters for High‐Precision Neuromorphic Computing
title_short Flexible Synaptic Memristors With Controlled Rigidity in Zirconium‐Oxo Clusters for High‐Precision Neuromorphic Computing
title_sort flexible synaptic memristors with controlled rigidity in zirconium oxo clusters for high precision neuromorphic computing
topic flexible memristors
metal‐oxo clusters
neuromorphic computings
synaptic devices
Zr6O4OH4(OMc)12
url https://doi.org/10.1002/advs.202412289
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