Influence of deposition temperature and precursor chemistry on the properties of atomic layer deposited Hf0.5Zr0.5O2 thin films

Influence of deposition temperature and precursor chemistry on the properties of atomic layer deposited Hf0.5Zr0.5O2 thin films

This study examined the effects of deposition temperature on Hf0.5Zr0.5O2 (HZO) thin films deposited using atomic layer deposition (ALD) with Tetrakis(ethylmethylamino) (TEMA) Hf, Zr, and cyclopentadienyl (CP)-linked Hf, Zr precursors. The discrete feeding method was utilized to stabilize the growth...

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Bibliographic Details
Main Authors: Seong Jae Shin, Hani Kim, Seungyong Byun, Jonghoon Shin, Jinwoo Choi, Suk Hyun Lee, Kyung Do Kim, Jae Hee Song, Dong Hoon Shin, Soo Hyung Lee, In Soo Lee, Hyunwoo Nam, Cheol Seong Hwang
Format: Article
Language:English
Published: Elsevier 2025-11-01
Series:Journal of Materiomics
Subjects:
Ferroelectric Hf0.5Zr0.5O2
Atomic layer deposition
CP-Linked precursor
Deposition temperature
In-situ crystallization
Film thickness
Online Access:http://www.sciencedirect.com/science/article/pii/S2352847825000917
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