Influence of deposition temperature and precursor chemistry on the properties of atomic layer deposited Hf0.5Zr0.5O2 thin films
This study examined the effects of deposition temperature on Hf0.5Zr0.5O2 (HZO) thin films deposited using atomic layer deposition (ALD) with Tetrakis(ethylmethylamino) (TEMA) Hf, Zr, and cyclopentadienyl (CP)-linked Hf, Zr precursors. The discrete feeding method was utilized to stabilize the growth...
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Elsevier
2025-11-01
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| Series: | Journal of Materiomics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352847825000917 |
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| author | Seong Jae Shin Hani Kim Seungyong Byun Jonghoon Shin Jinwoo Choi Suk Hyun Lee Kyung Do Kim Jae Hee Song Dong Hoon Shin Soo Hyung Lee In Soo Lee Hyunwoo Nam Cheol Seong Hwang |
| author_facet | Seong Jae Shin Hani Kim Seungyong Byun Jonghoon Shin Jinwoo Choi Suk Hyun Lee Kyung Do Kim Jae Hee Song Dong Hoon Shin Soo Hyung Lee In Soo Lee Hyunwoo Nam Cheol Seong Hwang |
| author_sort | Seong Jae Shin |
| collection | DOAJ |
| description | This study examined the effects of deposition temperature on Hf0.5Zr0.5O2 (HZO) thin films deposited using atomic layer deposition (ALD) with Tetrakis(ethylmethylamino) (TEMA) Hf, Zr, and cyclopentadienyl (CP)-linked Hf, Zr precursors. The discrete feeding method was utilized to stabilize the growth per cycle, addressing challenges related to CP-linked precursors' high viscosity and molecular mass. The ALD temperature windows for HfO2 and ZrO2 films using the CP-linked precursors were 330–370 °C and 290–330 °C, respectively, higher than those using the TEMA precursors (250–280 °C). Films deposited at higher temperatures with CP-linked precursors showed higher density and lower leakage currents than those with TEMA precursors, showing ferroelectric hysteresis loops from Hf0.5Zr0.5O2 (HZO) film at thicknesses as low as 5 nm without a wake-up process. In contrast, the film using TEMA precursor required a minimum thickness of 18 nm to exhibit similar properties. Crystallographic analysis revealed improved crystallization, larger grain sizes, and lower tensile stress in films deposited at higher temperatures. Also, in-situ crystallization was achievable for HZO films thicker than 6 nm when deposited at elevated temperatures. These findings demonstrate that higher temperature deposition by adopting CP-linked precursors enhances HZO thin film properties, making them suitable for advanced ferroelectric memory applications. |
| format | Article |
| id | doaj-art-3ed9eb2a83d643779d69028de6fb25f2 |
| institution | Kabale University |
| issn | 2352-8478 |
| language | English |
| publishDate | 2025-11-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Journal of Materiomics |
| spelling | doaj-art-3ed9eb2a83d643779d69028de6fb25f22025-08-23T04:48:43ZengElsevierJournal of Materiomics2352-84782025-11-0111610110110.1016/j.jmat.2025.101101Influence of deposition temperature and precursor chemistry on the properties of atomic layer deposited Hf0.5Zr0.5O2 thin filmsSeong Jae Shin0Hani Kim1Seungyong Byun2Jonghoon Shin3Jinwoo Choi4Suk Hyun Lee5Kyung Do Kim6Jae Hee Song7Dong Hoon Shin8Soo Hyung Lee9In Soo Lee10Hyunwoo Nam11Cheol Seong Hwang12Department of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaDepartment of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaCorresponding author.; Department of Materials Science and Engineering & Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of KoreaThis study examined the effects of deposition temperature on Hf0.5Zr0.5O2 (HZO) thin films deposited using atomic layer deposition (ALD) with Tetrakis(ethylmethylamino) (TEMA) Hf, Zr, and cyclopentadienyl (CP)-linked Hf, Zr precursors. The discrete feeding method was utilized to stabilize the growth per cycle, addressing challenges related to CP-linked precursors' high viscosity and molecular mass. The ALD temperature windows for HfO2 and ZrO2 films using the CP-linked precursors were 330–370 °C and 290–330 °C, respectively, higher than those using the TEMA precursors (250–280 °C). Films deposited at higher temperatures with CP-linked precursors showed higher density and lower leakage currents than those with TEMA precursors, showing ferroelectric hysteresis loops from Hf0.5Zr0.5O2 (HZO) film at thicknesses as low as 5 nm without a wake-up process. In contrast, the film using TEMA precursor required a minimum thickness of 18 nm to exhibit similar properties. Crystallographic analysis revealed improved crystallization, larger grain sizes, and lower tensile stress in films deposited at higher temperatures. Also, in-situ crystallization was achievable for HZO films thicker than 6 nm when deposited at elevated temperatures. These findings demonstrate that higher temperature deposition by adopting CP-linked precursors enhances HZO thin film properties, making them suitable for advanced ferroelectric memory applications.http://www.sciencedirect.com/science/article/pii/S2352847825000917Ferroelectric Hf0.5Zr0.5O2Atomic layer depositionCP-Linked precursorDeposition temperatureIn-situ crystallizationFilm thickness |
| spellingShingle | Seong Jae Shin Hani Kim Seungyong Byun Jonghoon Shin Jinwoo Choi Suk Hyun Lee Kyung Do Kim Jae Hee Song Dong Hoon Shin Soo Hyung Lee In Soo Lee Hyunwoo Nam Cheol Seong Hwang Influence of deposition temperature and precursor chemistry on the properties of atomic layer deposited Hf0.5Zr0.5O2 thin films Journal of Materiomics Ferroelectric Hf0.5Zr0.5O2 Atomic layer deposition CP-Linked precursor Deposition temperature In-situ crystallization Film thickness |
| title | Influence of deposition temperature and precursor chemistry on the properties of atomic layer deposited Hf0.5Zr0.5O2 thin films |
| title_full | Influence of deposition temperature and precursor chemistry on the properties of atomic layer deposited Hf0.5Zr0.5O2 thin films |
| title_fullStr | Influence of deposition temperature and precursor chemistry on the properties of atomic layer deposited Hf0.5Zr0.5O2 thin films |
| title_full_unstemmed | Influence of deposition temperature and precursor chemistry on the properties of atomic layer deposited Hf0.5Zr0.5O2 thin films |
| title_short | Influence of deposition temperature and precursor chemistry on the properties of atomic layer deposited Hf0.5Zr0.5O2 thin films |
| title_sort | influence of deposition temperature and precursor chemistry on the properties of atomic layer deposited hf0 5zr0 5o2 thin films |
| topic | Ferroelectric Hf0.5Zr0.5O2 Atomic layer deposition CP-Linked precursor Deposition temperature In-situ crystallization Film thickness |
| url | http://www.sciencedirect.com/science/article/pii/S2352847825000917 |
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