Influence of deposition temperature and precursor chemistry on the properties of atomic layer deposited Hf0.5Zr0.5O2 thin films

Influence of deposition temperature and precursor chemistry on the properties of atomic layer deposited Hf0.5Zr0.5O2 thin films

This study examined the effects of deposition temperature on Hf0.5Zr0.5O2 (HZO) thin films deposited using atomic layer deposition (ALD) with Tetrakis(ethylmethylamino) (TEMA) Hf, Zr, and cyclopentadienyl (CP)-linked Hf, Zr precursors. The discrete feeding method was utilized to stabilize the growth...

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Main Authors: Seong Jae Shin, Hani Kim, Seungyong Byun, Jonghoon Shin, Jinwoo Choi, Suk Hyun Lee, Kyung Do Kim, Jae Hee Song, Dong Hoon Shin, Soo Hyung Lee, In Soo Lee, Hyunwoo Nam, Cheol Seong Hwang
Format: Article
Language:English
Published: Elsevier 2025-11-01
Series:Journal of Materiomics
Subjects:
Ferroelectric Hf0.5Zr0.5O2
Atomic layer deposition
CP-Linked precursor
Deposition temperature
In-situ crystallization
Film thickness
Online Access:http://www.sciencedirect.com/science/article/pii/S2352847825000917
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Summary:This study examined the effects of deposition temperature on Hf0.5Zr0.5O2 (HZO) thin films deposited using atomic layer deposition (ALD) with Tetrakis(ethylmethylamino) (TEMA) Hf, Zr, and cyclopentadienyl (CP)-linked Hf, Zr precursors. The discrete feeding method was utilized to stabilize the growth per cycle, addressing challenges related to CP-linked precursors' high viscosity and molecular mass. The ALD temperature windows for HfO2 and ZrO2 films using the CP-linked precursors were 330–370 °C and 290–330 °C, respectively, higher than those using the TEMA precursors (250–280 °C). Films deposited at higher temperatures with CP-linked precursors showed higher density and lower leakage currents than those with TEMA precursors, showing ferroelectric hysteresis loops from Hf0.5Zr0.5O2 (HZO) film at thicknesses as low as 5 nm without a wake-up process. In contrast, the film using TEMA precursor required a minimum thickness of 18 nm to exhibit similar properties. Crystallographic analysis revealed improved crystallization, larger grain sizes, and lower tensile stress in films deposited at higher temperatures. Also, in-situ crystallization was achievable for HZO films thicker than 6 nm when deposited at elevated temperatures. These findings demonstrate that higher temperature deposition by adopting CP-linked precursors enhances HZO thin film properties, making them suitable for advanced ferroelectric memory applications.
ISSN:2352-8478

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